JPH0516653B2 - - Google Patents
Info
- Publication number
- JPH0516653B2 JPH0516653B2 JP27800685A JP27800685A JPH0516653B2 JP H0516653 B2 JPH0516653 B2 JP H0516653B2 JP 27800685 A JP27800685 A JP 27800685A JP 27800685 A JP27800685 A JP 27800685A JP H0516653 B2 JPH0516653 B2 JP H0516653B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- oxygen
- silicon thin
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 238000002294 plasma sputter deposition Methods 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 230000007547 defect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800685A JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800685A JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62137820A JPS62137820A (ja) | 1987-06-20 |
| JPH0516653B2 true JPH0516653B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=17591316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27800685A Granted JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62137820A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010044998A (ko) * | 1999-11-02 | 2001-06-05 | 박종섭 | 불순물 도핑 장치의 세정방법 |
-
1985
- 1985-12-12 JP JP27800685A patent/JPS62137820A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62137820A (ja) | 1987-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |