JPS62128532A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS62128532A
JPS62128532A JP26838185A JP26838185A JPS62128532A JP S62128532 A JPS62128532 A JP S62128532A JP 26838185 A JP26838185 A JP 26838185A JP 26838185 A JP26838185 A JP 26838185A JP S62128532 A JPS62128532 A JP S62128532A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
wafer
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26838185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473615B2 (cs
Inventor
Makoto Hideshima
秀島　誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP26838185A priority Critical patent/JPS62128532A/ja
Publication of JPS62128532A publication Critical patent/JPS62128532A/ja
Publication of JPH0473615B2 publication Critical patent/JPH0473615B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
JP26838185A 1985-11-30 1985-11-30 半導体装置及びその製造方法 Granted JPS62128532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26838185A JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26838185A JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS62128532A true JPS62128532A (ja) 1987-06-10
JPH0473615B2 JPH0473615B2 (cs) 1992-11-24

Family

ID=17457696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26838185A Granted JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS62128532A (cs)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629558A (ja) * 1992-07-08 1994-02-04 Naoshige Tamamushi プレーナ構造を有する静電誘導ダイオード
JPH0637335A (ja) * 1992-07-15 1994-02-10 Naoshige Tamamushi 埋込み構造もしくは切込み構造を有する静電誘導ダイオード
US5313092A (en) * 1989-05-12 1994-05-17 Nippon Soken, Inc. Semiconductor power device having walls of an inverted mesa shape to improve power handling capability
US5466303A (en) * 1994-03-25 1995-11-14 Nippondenso Co., Ltd. Semiconductor device and manufacturing method therefor
US5650354A (en) * 1993-11-09 1997-07-22 Nippondenso Co., Ltd. Method for producing semiconductor device
JP2007150085A (ja) * 2005-11-29 2007-06-14 Renesas Technology Corp 双方向プレーナ型ダイオード

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236243A (ja) * 1984-05-09 1985-11-25 Toshiba Corp 半導体基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236243A (ja) * 1984-05-09 1985-11-25 Toshiba Corp 半導体基板の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313092A (en) * 1989-05-12 1994-05-17 Nippon Soken, Inc. Semiconductor power device having walls of an inverted mesa shape to improve power handling capability
JPH0629558A (ja) * 1992-07-08 1994-02-04 Naoshige Tamamushi プレーナ構造を有する静電誘導ダイオード
JPH0637335A (ja) * 1992-07-15 1994-02-10 Naoshige Tamamushi 埋込み構造もしくは切込み構造を有する静電誘導ダイオード
US5650354A (en) * 1993-11-09 1997-07-22 Nippondenso Co., Ltd. Method for producing semiconductor device
US5466303A (en) * 1994-03-25 1995-11-14 Nippondenso Co., Ltd. Semiconductor device and manufacturing method therefor
JP2007150085A (ja) * 2005-11-29 2007-06-14 Renesas Technology Corp 双方向プレーナ型ダイオード

Also Published As

Publication number Publication date
JPH0473615B2 (cs) 1992-11-24

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Legal Events

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