JPS621259A - 半導体抵抗素子の形成方法 - Google Patents

半導体抵抗素子の形成方法

Info

Publication number
JPS621259A
JPS621259A JP60141224A JP14122485A JPS621259A JP S621259 A JPS621259 A JP S621259A JP 60141224 A JP60141224 A JP 60141224A JP 14122485 A JP14122485 A JP 14122485A JP S621259 A JPS621259 A JP S621259A
Authority
JP
Japan
Prior art keywords
emitter
resistance element
forming
ions
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60141224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0455343B2 (enrdf_load_stackoverflow
Inventor
Katsunori Tsuda
津田　克紀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60141224A priority Critical patent/JPS621259A/ja
Publication of JPS621259A publication Critical patent/JPS621259A/ja
Publication of JPH0455343B2 publication Critical patent/JPH0455343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60141224A 1985-06-26 1985-06-26 半導体抵抗素子の形成方法 Granted JPS621259A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60141224A JPS621259A (ja) 1985-06-26 1985-06-26 半導体抵抗素子の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60141224A JPS621259A (ja) 1985-06-26 1985-06-26 半導体抵抗素子の形成方法

Publications (2)

Publication Number Publication Date
JPS621259A true JPS621259A (ja) 1987-01-07
JPH0455343B2 JPH0455343B2 (enrdf_load_stackoverflow) 1992-09-03

Family

ID=15287006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60141224A Granted JPS621259A (ja) 1985-06-26 1985-06-26 半導体抵抗素子の形成方法

Country Status (1)

Country Link
JP (1) JPS621259A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130553A (ja) * 1987-11-17 1989-05-23 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133345A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路及びその製造方法
JPH01133350A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133348A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133344A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01161764A (ja) * 1987-12-17 1989-06-26 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01171264A (ja) * 1987-12-25 1989-07-06 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01171263A (ja) * 1987-12-25 1989-07-06 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01175252A (ja) * 1987-12-28 1989-07-11 Sanyo Electric Co Ltd 半導体集積回路の製造方法
FR2884050A1 (fr) * 2005-04-01 2006-10-06 St Microelectronics Sa Circuit integre comprenant un substrat et une resistance
RU2646545C1 (ru) * 2016-12-14 2018-03-05 ООО "Тонкопленочные технологии" Полупроводниковый резистор

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593962A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の拡散抵抗の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593962A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の拡散抵抗の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130553A (ja) * 1987-11-17 1989-05-23 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133345A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路及びその製造方法
JPH01133350A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133348A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01133344A (ja) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01161764A (ja) * 1987-12-17 1989-06-26 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01171264A (ja) * 1987-12-25 1989-07-06 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01171263A (ja) * 1987-12-25 1989-07-06 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JPH01175252A (ja) * 1987-12-28 1989-07-11 Sanyo Electric Co Ltd 半導体集積回路の製造方法
FR2884050A1 (fr) * 2005-04-01 2006-10-06 St Microelectronics Sa Circuit integre comprenant un substrat et une resistance
US7714390B2 (en) 2005-04-01 2010-05-11 Stmicroelectronics S.A. Integrated circuit comprising a substrate and a resistor
RU2646545C1 (ru) * 2016-12-14 2018-03-05 ООО "Тонкопленочные технологии" Полупроводниковый резистор

Also Published As

Publication number Publication date
JPH0455343B2 (enrdf_load_stackoverflow) 1992-09-03

Similar Documents

Publication Publication Date Title
US4486942A (en) Method of manufacturing semiconductor integrated circuit BI-MOS device
JPS6187368A (ja) 自己整合多結晶シリコン電極を持つた集積回路用自己整合金属シリサイドプロセス
JPS6241425B2 (enrdf_load_stackoverflow)
JPS621259A (ja) 半導体抵抗素子の形成方法
JPH025433A (ja) バイポーラトランジスタの製造方法
JP3067340B2 (ja) 半導体装置
JPS5851563A (ja) 半導体装置の製造法
JPS5933271B2 (ja) 半導体装置の製造方法
JPH04168764A (ja) 半導体装置の製造方法
JPS62281351A (ja) 半導体装置の製造方法
JPS59182566A (ja) 半導体装置
JPS61219169A (ja) 半導体装置の製造方法
JPH0385758A (ja) 半導体抵抗器
JPH05218306A (ja) 半導体集積回路およびその製造方法
JPS62296452A (ja) 半導体装置の製造方法
JPS5826177B2 (ja) 半導体装置の製造方法
JPS62286221A (ja) 半導体装置の製造方法
JPH047588B2 (enrdf_load_stackoverflow)
JPH06181310A (ja) 半導体装置の製造方法
JPS6134966A (ja) 半導体装置の製造方法
JPS61207050A (ja) 半導体装置の製造方法
JPH0319270A (ja) 半導体装置
JPS60217666A (ja) 半導体装置の製造方法
JPH01146363A (ja) 半導体装置の製造方法
JPS63157473A (ja) 半導体素子の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees