JPS6211221A - 分子線エピタキシヤル成長方法 - Google Patents
分子線エピタキシヤル成長方法Info
- Publication number
- JPS6211221A JPS6211221A JP15192285A JP15192285A JPS6211221A JP S6211221 A JPS6211221 A JP S6211221A JP 15192285 A JP15192285 A JP 15192285A JP 15192285 A JP15192285 A JP 15192285A JP S6211221 A JPS6211221 A JP S6211221A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gaas
- growth
- molecular beam
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 238000000746 purification Methods 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15192285A JPS6211221A (ja) | 1985-07-08 | 1985-07-08 | 分子線エピタキシヤル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15192285A JPS6211221A (ja) | 1985-07-08 | 1985-07-08 | 分子線エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211221A true JPS6211221A (ja) | 1987-01-20 |
| JPH0360173B2 JPH0360173B2 (enrdf_load_stackoverflow) | 1991-09-12 |
Family
ID=15529129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15192285A Granted JPS6211221A (ja) | 1985-07-08 | 1985-07-08 | 分子線エピタキシヤル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211221A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125918A (ja) * | 1987-11-11 | 1989-05-18 | Sony Corp | 半導体基板 |
| US5459331A (en) * | 1993-05-10 | 1995-10-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor |
-
1985
- 1985-07-08 JP JP15192285A patent/JPS6211221A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125918A (ja) * | 1987-11-11 | 1989-05-18 | Sony Corp | 半導体基板 |
| US5459331A (en) * | 1993-05-10 | 1995-10-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360173B2 (enrdf_load_stackoverflow) | 1991-09-12 |
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