JPH0360173B2 - - Google Patents

Info

Publication number
JPH0360173B2
JPH0360173B2 JP15192285A JP15192285A JPH0360173B2 JP H0360173 B2 JPH0360173 B2 JP H0360173B2 JP 15192285 A JP15192285 A JP 15192285A JP 15192285 A JP15192285 A JP 15192285A JP H0360173 B2 JPH0360173 B2 JP H0360173B2
Authority
JP
Japan
Prior art keywords
substrate
gaas
molecular beam
doped
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15192285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211221A (ja
Inventor
Toshiaki Kinosada
Tatsuya Yamashita
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15192285A priority Critical patent/JPS6211221A/ja
Publication of JPS6211221A publication Critical patent/JPS6211221A/ja
Publication of JPH0360173B2 publication Critical patent/JPH0360173B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP15192285A 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法 Granted JPS6211221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15192285A JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15192285A JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS6211221A JPS6211221A (ja) 1987-01-20
JPH0360173B2 true JPH0360173B2 (enrdf_load_stackoverflow) 1991-09-12

Family

ID=15529129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15192285A Granted JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS6211221A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959767B2 (ja) * 1987-11-11 1999-10-06 ソニー株式会社 半導体基板並びに半導体装置及びその製造方法
JPH06318606A (ja) * 1993-05-10 1994-11-15 Mitsubishi Electric Corp 半導体装置，並びにｈｂｔ素子及びｈｅｍｔ素子

Also Published As

Publication number Publication date
JPS6211221A (ja) 1987-01-20

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