JPS6211068B2 - - Google Patents
Info
- Publication number
- JPS6211068B2 JPS6211068B2 JP8617080A JP8617080A JPS6211068B2 JP S6211068 B2 JPS6211068 B2 JP S6211068B2 JP 8617080 A JP8617080 A JP 8617080A JP 8617080 A JP8617080 A JP 8617080A JP S6211068 B2 JPS6211068 B2 JP S6211068B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- pattern
- etched
- patterns
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617080A JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617080A JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5713180A JPS5713180A (en) | 1982-01-23 |
| JPS6211068B2 true JPS6211068B2 (OSRAM) | 1987-03-10 |
Family
ID=13879276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8617080A Granted JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5713180A (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5941839A (ja) * | 1982-08-31 | 1984-03-08 | Fujitsu Ltd | パタ−ン形成方法 |
| JPS5950527A (ja) * | 1982-09-16 | 1984-03-23 | Hitachi Ltd | 半導体装置 |
| JPS60148118A (ja) * | 1984-01-13 | 1985-08-05 | Toshiba Corp | 半導体装置 |
| JPH0658947B2 (ja) * | 1984-02-24 | 1994-08-03 | 株式会社日立製作所 | 半導体メモリ装置の製法 |
| WO1987000345A1 (en) * | 1985-06-28 | 1987-01-15 | American Telephone & Telegraph Company | Procedure for fabricating devices involving dry etching |
| JPS6289331A (ja) * | 1985-10-16 | 1987-04-23 | Toshiba Corp | 微細パタ−ンの加工方法 |
| JPS62123722A (ja) * | 1985-11-22 | 1987-06-05 | Nec Corp | 半導体装置 |
| JPH07101683B2 (ja) * | 1986-07-29 | 1995-11-01 | 株式会社東芝 | 半導体装置のパタ−ン形成方法 |
| JPS63138738A (ja) * | 1986-12-01 | 1988-06-10 | Ricoh Co Ltd | 半導体装置の製造方法 |
| JPH04142739A (ja) * | 1990-10-03 | 1992-05-15 | Nec Corp | 半導体集積回路装置 |
-
1980
- 1980-06-25 JP JP8617080A patent/JPS5713180A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5713180A (en) | 1982-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6323657B2 (OSRAM) | ||
| US4599137A (en) | Method of forming resist pattern | |
| JPS6211068B2 (OSRAM) | ||
| JPS63236319A (ja) | 半導体装置の製造方法 | |
| KR0172255B1 (ko) | 반도체 소자의 금속 배선 형성방법 | |
| KR20010015438A (ko) | 전자빔 노광 마스크 및 그 제조 방법 | |
| US4612274A (en) | Electron beam/optical hybrid lithographic resist process in acoustic wave devices | |
| JPH0458167B2 (OSRAM) | ||
| EP0104235A4 (en) | METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS. | |
| KR100281891B1 (ko) | 반도체장치의 배선패턴 형성방법 | |
| JP3274448B2 (ja) | ステンシルマスクの製造方法 | |
| JP2767594B2 (ja) | 半導体装置の製造方法 | |
| JPH04291345A (ja) | パターン形成方法 | |
| JPH03257825A (ja) | 半導体装置の製造方法 | |
| JPS5925370B2 (ja) | 半導体装置の製造方法 | |
| KR930006133B1 (ko) | 모스소자의 콘택트홀 형성방법 | |
| JP2570709B2 (ja) | エツチング方法 | |
| JPH0653107A (ja) | 半導体装置の製造方法 | |
| JPH0458168B2 (OSRAM) | ||
| JPS63111619A (ja) | 半導体装置の製造方法 | |
| JPH04348034A (ja) | 配線パターンの形成方法 | |
| JPS58188134A (ja) | 集積回路の製造方法 | |
| JPS593953A (ja) | 半導体装置の製造方法 | |
| JPH04100229A (ja) | 半導体装置の製造方法 | |
| JPS60182093A (ja) | 磁気バブルメモリ素子の製造方法 |