JPS6191961A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6191961A
JPS6191961A JP59213855A JP21385584A JPS6191961A JP S6191961 A JPS6191961 A JP S6191961A JP 59213855 A JP59213855 A JP 59213855A JP 21385584 A JP21385584 A JP 21385584A JP S6191961 A JPS6191961 A JP S6191961A
Authority
JP
Japan
Prior art keywords
layer
polysilicon
manufacturing
polysilicon layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59213855A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0418693B2 (enExample
Inventor
Shigeru Ozora
大空　茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59213855A priority Critical patent/JPS6191961A/ja
Publication of JPS6191961A publication Critical patent/JPS6191961A/ja
Publication of JPH0418693B2 publication Critical patent/JPH0418693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Fuel Cell (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP59213855A 1984-10-12 1984-10-12 半導体装置の製造方法 Granted JPS6191961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59213855A JPS6191961A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59213855A JPS6191961A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6191961A true JPS6191961A (ja) 1986-05-10
JPH0418693B2 JPH0418693B2 (enExample) 1992-03-27

Family

ID=16646136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59213855A Granted JPS6191961A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6191961A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486558A (en) * 1987-09-29 1989-03-31 Toshiba Corp Manufacture of semiconductor device
JPH03147333A (ja) * 1989-11-02 1991-06-24 Nec Corp 半導体装置
JPH04329641A (ja) * 1991-04-30 1992-11-18 Nec Ic Microcomput Syst Ltd Ｎｐｎ型バイポーラトランジスタの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486558A (en) * 1987-09-29 1989-03-31 Toshiba Corp Manufacture of semiconductor device
JPH03147333A (ja) * 1989-11-02 1991-06-24 Nec Corp 半導体装置
JPH04329641A (ja) * 1991-04-30 1992-11-18 Nec Ic Microcomput Syst Ltd Ｎｐｎ型バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
JPH0418693B2 (enExample) 1992-03-27

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Legal Events

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