JPS6184827A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6184827A
JPS6184827A JP59206930A JP20693084A JPS6184827A JP S6184827 A JPS6184827 A JP S6184827A JP 59206930 A JP59206930 A JP 59206930A JP 20693084 A JP20693084 A JP 20693084A JP S6184827 A JPS6184827 A JP S6184827A
Authority
JP
Japan
Prior art keywords
layer
substrate
manufacturing
semiconductor device
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59206930A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310222B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Mototaka Tanetani
元隆 種谷
Kaneki Matsui
完益 松井
Akihiro Matsumoto
晃広 松本
Hiroshi Hayashi
寛 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59206930A priority Critical patent/JPS6184827A/ja
Priority to US06/781,707 priority patent/US4632709A/en
Priority to DE19853535046 priority patent/DE3535046A1/de
Priority to GB08524230A priority patent/GB2165093B/en
Publication of JPS6184827A publication Critical patent/JPS6184827A/ja
Publication of JPH0310222B2 publication Critical patent/JPH0310222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
JP59206930A 1984-10-02 1984-10-02 半導体装置の製造方法 Granted JPS6184827A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59206930A JPS6184827A (ja) 1984-10-02 1984-10-02 半導体装置の製造方法
US06/781,707 US4632709A (en) 1984-10-02 1985-09-30 Process for preventing melt-back in the production of aluminum-containing laser devices
DE19853535046 DE3535046A1 (de) 1984-10-02 1985-10-01 Verfahren zur herstellung von halbleiter-bauelementen
GB08524230A GB2165093B (en) 1984-10-02 1985-10-02 A process for the protection of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59206930A JPS6184827A (ja) 1984-10-02 1984-10-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6184827A true JPS6184827A (ja) 1986-04-30
JPH0310222B2 JPH0310222B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-13

Family

ID=16531405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59206930A Granted JPS6184827A (ja) 1984-10-02 1984-10-02 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4632709A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6184827A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3535046A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2165093B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS61163689A (ja) * 1985-01-14 1986-07-24 Sharp Corp 半導体装置の製造方法
JPH07183618A (ja) * 1993-12-22 1995-07-21 Ricoh Co Ltd 半導体レーザ装置、半導体レーザ装置製造方法並びに集積型半導体レーザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143822A (en) * 1981-02-27 1982-09-06 Nec Corp Method for growth of pluralistically mixed crystal semiconductor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028146A (en) * 1975-03-11 1977-06-07 Bell Telephone Laboratories, Incorporated LPE Technique for fabricating tapered optical couplers
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
US4371968A (en) * 1981-07-01 1983-02-01 The United States Of America As Represented By The Secretary Of The Army Monolithic injection laser arrays formed by crystal regrowth techniques
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
DE3483733D1 (de) * 1983-04-27 1991-01-24 Toshiba Kawasaki Kk Halbleiterlaser.
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143822A (en) * 1981-02-27 1982-09-06 Nec Corp Method for growth of pluralistically mixed crystal semiconductor

Also Published As

Publication number Publication date
GB2165093B (en) 1988-10-26
DE3535046A1 (de) 1986-04-03
JPH0310222B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-13
GB2165093A (en) 1986-04-03
GB8524230D0 (en) 1985-11-06
US4632709A (en) 1986-12-30
DE3535046C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-08-10

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