JPS6361793B2 - - Google Patents

Info

Publication number
JPS6361793B2
JPS6361793B2 JP54138795A JP13879579A JPS6361793B2 JP S6361793 B2 JPS6361793 B2 JP S6361793B2 JP 54138795 A JP54138795 A JP 54138795A JP 13879579 A JP13879579 A JP 13879579A JP S6361793 B2 JPS6361793 B2 JP S6361793B2
Authority
JP
Japan
Prior art keywords
layer
etching
semiconductor
width
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54138795A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5662386A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13879579A priority Critical patent/JPS5662386A/ja
Publication of JPS5662386A publication Critical patent/JPS5662386A/ja
Publication of JPS6361793B2 publication Critical patent/JPS6361793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
JP13879579A 1979-10-29 1979-10-29 Manufacture of semiconductor device Granted JPS5662386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13879579A JPS5662386A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13879579A JPS5662386A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5662386A JPS5662386A (en) 1981-05-28
JPS6361793B2 true JPS6361793B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-30

Family

ID=15230392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13879579A Granted JPS5662386A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662386A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141282A (ja) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp 半導体レ−ザ装置
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
JPS61171136A (ja) * 1985-01-25 1986-08-01 Toshiba Corp 半導体結晶のメサエツチング方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162288A (en) * 1979-06-04 1980-12-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried type photosemiconductor device

Also Published As

Publication number Publication date
JPS5662386A (en) 1981-05-28

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