JPS6161383B2 - - Google Patents
Info
- Publication number
- JPS6161383B2 JPS6161383B2 JP54101504A JP10150479A JPS6161383B2 JP S6161383 B2 JPS6161383 B2 JP S6161383B2 JP 54101504 A JP54101504 A JP 54101504A JP 10150479 A JP10150479 A JP 10150479A JP S6161383 B2 JPS6161383 B2 JP S6161383B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- photosensitive layer
- layer
- photosensitive
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 53
- 230000007704 transition Effects 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 14
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 11
- 229910052711 selenium Inorganic materials 0.000 description 11
- 239000011669 selenium Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10150479A JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10150479A JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5625743A JPS5625743A (en) | 1981-03-12 |
| JPS6161383B2 true JPS6161383B2 (en, 2012) | 1986-12-25 |
Family
ID=14302436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10150479A Granted JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5625743A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07158754A (ja) * | 1993-11-11 | 1995-06-20 | Ckd Corp | 複合弁 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2954552C2 (en, 2012) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
| US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
| US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
| US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
| JPS5711351A (en) * | 1980-06-25 | 1982-01-21 | Shunpei Yamazaki | Electrostatic copying machine |
| US4522905A (en) * | 1982-02-04 | 1985-06-11 | Canon Kk | Amorphous silicon photoconductive member with interface and rectifying layers |
| US4452874A (en) * | 1982-02-08 | 1984-06-05 | Canon Kabushiki Kaisha | Photoconductive member with multiple amorphous Si layers |
| US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
| JPH0616178B2 (ja) * | 1983-07-19 | 1994-03-02 | 株式会社東芝 | 光導電部材 |
| US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
| US8193537B2 (en) | 2006-06-19 | 2012-06-05 | Ss Sc Ip, Llc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US7821015B2 (en) | 2006-06-19 | 2010-10-26 | Semisouth Laboratories, Inc. | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
-
1979
- 1979-08-08 JP JP10150479A patent/JPS5625743A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07158754A (ja) * | 1993-11-11 | 1995-06-20 | Ckd Corp | 複合弁 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5625743A (en) | 1981-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6161383B2 (en, 2012) | ||
| US4557987A (en) | Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers | |
| JPS639219B2 (en, 2012) | ||
| JPH067270B2 (ja) | 電子写真用感光体 | |
| JPH07120953A (ja) | 電子写真感光体およびそれを用いた画像形成方法 | |
| US4716089A (en) | Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range | |
| US4677044A (en) | Multi-layered electrophotographic photosensitive member having amorphous silicon | |
| JPS62148966A (ja) | 電子写真用感光体 | |
| JPS5984254A (ja) | 感光体 | |
| JPS61110152A (ja) | 感光体 | |
| JPH0760271B2 (ja) | 光導電部材 | |
| JPS60115941A (ja) | 電子写真感光体 | |
| JPH058420B2 (en, 2012) | ||
| JP2920668B2 (ja) | 電子写真感光体 | |
| JPH0616178B2 (ja) | 光導電部材 | |
| JPS61281249A (ja) | 感光体 | |
| JPH052296A (ja) | 画像形成装置 | |
| JPH0743543B2 (ja) | 光導電部材 | |
| JPH0760272B2 (ja) | 光導電部材 | |
| JPH04296881A (ja) | 画像形成装置 | |
| JPH052297A (ja) | 画像形成装置 | |
| JPS5952248A (ja) | 電子写真用感光体 | |
| JPS61126560A (ja) | 光導電部材 | |
| JPS62211662A (ja) | 感光体 | |
| JPS61232464A (ja) | 電子写真感光体 |