JPS5625743A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS5625743A JPS5625743A JP10150479A JP10150479A JPS5625743A JP S5625743 A JPS5625743 A JP S5625743A JP 10150479 A JP10150479 A JP 10150479A JP 10150479 A JP10150479 A JP 10150479A JP S5625743 A JPS5625743 A JP S5625743A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- electrophotographic receptor
- polyvinylcarbazole
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000003912 environmental pollution Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10150479A JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10150479A JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5625743A true JPS5625743A (en) | 1981-03-12 |
| JPS6161383B2 JPS6161383B2 (en, 2012) | 1986-12-25 |
Family
ID=14302436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10150479A Granted JPS5625743A (en) | 1979-08-08 | 1979-08-08 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5625743A (en, 2012) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
| US4452874A (en) * | 1982-02-08 | 1984-06-05 | Canon Kabushiki Kaisha | Photoconductive member with multiple amorphous Si layers |
| JPS6022382A (ja) * | 1983-07-19 | 1985-02-04 | Toshiba Corp | 光導電部材 |
| US4522905A (en) * | 1982-02-04 | 1985-06-11 | Canon Kk | Amorphous silicon photoconductive member with interface and rectifying layers |
| US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
| US4572881A (en) * | 1980-06-25 | 1986-02-25 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
| US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
| US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
| US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5303007A (en) * | 1980-06-25 | 1994-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing apparatus for electrostatic photocopying |
| USRE35198E (en) * | 1978-03-03 | 1996-04-02 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
| US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
| WO2007149846A3 (en) * | 2006-06-19 | 2008-06-12 | Semisouth Lab Inc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US8183124B2 (en) | 2006-06-19 | 2012-05-22 | Ss Sc Ip, Llc | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07158754A (ja) * | 1993-11-11 | 1995-06-20 | Ckd Corp | 複合弁 |
-
1979
- 1979-08-08 JP JP10150479A patent/JPS5625743A/ja active Granted
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE35198E (en) * | 1978-03-03 | 1996-04-02 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
| US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
| US5303007A (en) * | 1980-06-25 | 1994-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing apparatus for electrostatic photocopying |
| US4572881A (en) * | 1980-06-25 | 1986-02-25 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
| US4598031A (en) * | 1980-06-25 | 1986-07-01 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
| US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
| US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
| US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4522905A (en) * | 1982-02-04 | 1985-06-11 | Canon Kk | Amorphous silicon photoconductive member with interface and rectifying layers |
| US4452874A (en) * | 1982-02-08 | 1984-06-05 | Canon Kabushiki Kaisha | Photoconductive member with multiple amorphous Si layers |
| US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
| JPS6022382A (ja) * | 1983-07-19 | 1985-02-04 | Toshiba Corp | 光導電部材 |
| US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
| WO2007149846A3 (en) * | 2006-06-19 | 2008-06-12 | Semisouth Lab Inc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US8183124B2 (en) | 2006-06-19 | 2012-05-22 | Ss Sc Ip, Llc | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
| US8193537B2 (en) | 2006-06-19 | 2012-06-05 | Ss Sc Ip, Llc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US8455328B2 (en) | 2006-06-19 | 2013-06-04 | Power Integrations, Inc. | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US8592826B2 (en) | 2006-06-19 | 2013-11-26 | Michael S. Mazzola | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
| US8853710B2 (en) | 2006-06-19 | 2014-10-07 | Power Integrations, Inc. | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161383B2 (en, 2012) | 1986-12-25 |
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