JPS6159535B2 - - Google Patents
Info
- Publication number
- JPS6159535B2 JPS6159535B2 JP52158855A JP15885577A JPS6159535B2 JP S6159535 B2 JPS6159535 B2 JP S6159535B2 JP 52158855 A JP52158855 A JP 52158855A JP 15885577 A JP15885577 A JP 15885577A JP S6159535 B2 JPS6159535 B2 JP S6159535B2
- Authority
- JP
- Japan
- Prior art keywords
- area
- shot key
- small
- key barrier
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 150000002739 metals Chemical class 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/084—Diode-transistor logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15885577A JPS5499580A (en) | 1977-12-27 | 1977-12-27 | Semiconductor integrated circuit device |
DE2855816A DE2855816C2 (de) | 1977-12-27 | 1978-12-22 | Integrierte Halbleiterschaltungsanordnung mit einer Schottky-Sperrschichtdiode |
US06/234,848 US4316202A (en) | 1977-12-27 | 1981-02-17 | Semiconductor integrated circuit device having a Schottky barrier diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15885577A JPS5499580A (en) | 1977-12-27 | 1977-12-27 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5499580A JPS5499580A (en) | 1979-08-06 |
JPS6159535B2 true JPS6159535B2 (US06534493-20030318-C00166.png) | 1986-12-17 |
Family
ID=15680869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15885577A Granted JPS5499580A (en) | 1977-12-27 | 1977-12-27 | Semiconductor integrated circuit device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4316202A (US06534493-20030318-C00166.png) |
JP (1) | JPS5499580A (US06534493-20030318-C00166.png) |
DE (1) | DE2855816C2 (US06534493-20030318-C00166.png) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4573064A (en) * | 1981-11-02 | 1986-02-25 | Texas Instruments Incorporated | GaAs/GaAlAs Heterojunction bipolar integrated circuit devices |
JPS6010653A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | 半導体装置 |
JPS62131452U (US06534493-20030318-C00166.png) * | 1986-02-13 | 1987-08-19 | ||
JPH065736B2 (ja) * | 1989-12-15 | 1994-01-19 | 株式会社東芝 | ショットキー・ダイオード |
US6342997B1 (en) | 1998-02-11 | 2002-01-29 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
US5955793A (en) * | 1998-02-11 | 1999-09-21 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
CN113203930B (zh) * | 2021-04-23 | 2022-11-11 | 深圳市时代速信科技有限公司 | 一种肖特基结可靠性评估方法及装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3770606A (en) * | 1968-08-27 | 1973-11-06 | Bell Telephone Labor Inc | Schottky barrier diodes as impedance elements and method of making same |
US3585412A (en) * | 1968-08-27 | 1971-06-15 | Bell Telephone Labor Inc | Schottky barrier diodes as impedance elements |
US3660822A (en) * | 1969-12-15 | 1972-05-02 | Ibm | Variable breakdown storage cell with negative resistance operating characteristic |
US3719797A (en) * | 1971-12-16 | 1973-03-06 | Bell Telephone Labor Inc | Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes |
US3780320A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Schottky barrier diode read-only memory |
US3995301A (en) * | 1973-03-23 | 1976-11-30 | Ibm Corporation | Novel integratable Schottky Barrier structure and a method for the fabrication thereof |
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
DE2509530C2 (de) * | 1975-03-05 | 1985-05-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren |
JPS5240081A (en) * | 1975-09-26 | 1977-03-28 | Hitachi Ltd | Bi-polar rom |
GB1580977A (en) * | 1976-05-31 | 1980-12-10 | Siemens Ag | Schottkytransisitor-logic arrangements |
US4159915A (en) * | 1977-10-25 | 1979-07-03 | International Business Machines Corporation | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation |
-
1977
- 1977-12-27 JP JP15885577A patent/JPS5499580A/ja active Granted
-
1978
- 1978-12-22 DE DE2855816A patent/DE2855816C2/de not_active Expired
-
1981
- 1981-02-17 US US06/234,848 patent/US4316202A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2855816C2 (de) | 1983-10-06 |
US4316202A (en) | 1982-02-16 |
JPS5499580A (en) | 1979-08-06 |
DE2855816A1 (de) | 1979-06-28 |