JPS6159244B2 - - Google Patents
Info
- Publication number
- JPS6159244B2 JPS6159244B2 JP56070479A JP7047981A JPS6159244B2 JP S6159244 B2 JPS6159244 B2 JP S6159244B2 JP 56070479 A JP56070479 A JP 56070479A JP 7047981 A JP7047981 A JP 7047981A JP S6159244 B2 JPS6159244 B2 JP S6159244B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- silicon
- thin film
- base material
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 29
- 238000001816 cooling Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 238000004901 spalling Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910003923 SiC 4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Ceramic Products (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
| US06/368,440 US4515755A (en) | 1981-05-11 | 1982-04-14 | Apparatus for producing a silicon single crystal from a silicon melt |
| EP82103457A EP0065122B1 (en) | 1981-05-11 | 1982-04-23 | Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same |
| DE8282103457T DE3280107D1 (de) | 1981-05-11 | 1982-04-23 | Vorrichtungsteil aus siliziumnitrid zum ziehen von einkristallinem silizium und verfahren zu seiner herstellung. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188409A JPS57188409A (en) | 1982-11-19 |
| JPS6159244B2 true JPS6159244B2 (OSRAM) | 1986-12-15 |
Family
ID=13432692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56070479A Granted JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188409A (OSRAM) |
-
1981
- 1981-05-11 JP JP56070479A patent/JPS57188409A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57188409A (en) | 1982-11-19 |
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