JPS57188409A - Manufacture of high density silicon nitride - Google Patents
Manufacture of high density silicon nitrideInfo
- Publication number
- JPS57188409A JPS57188409A JP56070479A JP7047981A JPS57188409A JP S57188409 A JPS57188409 A JP S57188409A JP 56070479 A JP56070479 A JP 56070479A JP 7047981 A JP7047981 A JP 7047981A JP S57188409 A JPS57188409 A JP S57188409A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sin
- substrate
- vapor
- sin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To manufacture SiN with superior spalling resistance by carrying out all of stages for vapor-depositing a thin Si film on a substrate from a gaseous phase, further vapor-depositing an SiN layer on the Si film, and removing the Si film in a specified temp. range.
CONSTITUTION: A thin Si film about 10W300μm thickness is vapor-deposited on the surface of a heat resistant substrate such as C by a CVD method, and an SiN layer is further vapor-deposited on the Si film. The Si film is then removed by etching with gaseous HCl or the like and/or melting by heating to ≥about 1,420°C to separate the SiN from the substrate. Said stages are carried out in the temp. range of 700W1,600°C through no cooling stage. In said treatment the SiN layer is not cooled to a temp. at which a thermal strain is produced, and the Si film prevents impurities from entering the SiN layer from the substrate. Thus, high density and high purity SiN with superior spalling resistance is obtd. by such simple treatment.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
| US06/368,440 US4515755A (en) | 1981-05-11 | 1982-04-14 | Apparatus for producing a silicon single crystal from a silicon melt |
| EP82103457A EP0065122B1 (en) | 1981-05-11 | 1982-04-23 | Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same |
| DE8282103457T DE3280107D1 (en) | 1981-05-11 | 1982-04-23 | DEVICE PART FROM SILICON NITRIDE FOR DRAWING SINGLE CRYSTALLINE SILICON AND METHOD FOR THE PRODUCTION THEREOF. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188409A true JPS57188409A (en) | 1982-11-19 |
| JPS6159244B2 JPS6159244B2 (en) | 1986-12-15 |
Family
ID=13432692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56070479A Granted JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188409A (en) |
-
1981
- 1981-05-11 JP JP56070479A patent/JPS57188409A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159244B2 (en) | 1986-12-15 |
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