JPS57188409A - Manufacture of high density silicon nitride - Google Patents
Manufacture of high density silicon nitrideInfo
- Publication number
- JPS57188409A JPS57188409A JP56070479A JP7047981A JPS57188409A JP S57188409 A JPS57188409 A JP S57188409A JP 56070479 A JP56070479 A JP 56070479A JP 7047981 A JP7047981 A JP 7047981A JP S57188409 A JPS57188409 A JP S57188409A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sin
- substrate
- vapor
- sin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- 238000004901 spalling Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
Landscapes
- Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Ceramic Products (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
| US06/368,440 US4515755A (en) | 1981-05-11 | 1982-04-14 | Apparatus for producing a silicon single crystal from a silicon melt |
| EP82103457A EP0065122B1 (en) | 1981-05-11 | 1982-04-23 | Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same |
| DE8282103457T DE3280107D1 (de) | 1981-05-11 | 1982-04-23 | Vorrichtungsteil aus siliziumnitrid zum ziehen von einkristallinem silizium und verfahren zu seiner herstellung. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070479A JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188409A true JPS57188409A (en) | 1982-11-19 |
| JPS6159244B2 JPS6159244B2 (OSRAM) | 1986-12-15 |
Family
ID=13432692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56070479A Granted JPS57188409A (en) | 1981-05-11 | 1981-05-11 | Manufacture of high density silicon nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188409A (OSRAM) |
-
1981
- 1981-05-11 JP JP56070479A patent/JPS57188409A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159244B2 (OSRAM) | 1986-12-15 |
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