JPS6156163B2 - - Google Patents

Info

Publication number
JPS6156163B2
JPS6156163B2 JP54090886A JP9088679A JPS6156163B2 JP S6156163 B2 JPS6156163 B2 JP S6156163B2 JP 54090886 A JP54090886 A JP 54090886A JP 9088679 A JP9088679 A JP 9088679A JP S6156163 B2 JPS6156163 B2 JP S6156163B2
Authority
JP
Japan
Prior art keywords
deposition
precipitation
silicon
temperature
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54090886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5516000A (en
Inventor
Ruhia Ururitsuhi
Deiitsue Uorufugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5516000A publication Critical patent/JPS5516000A/ja
Publication of JPS6156163B2 publication Critical patent/JPS6156163B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP9088679A 1978-07-19 1979-07-17 Depositing particulate silicon crystal Granted JPS5516000A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782831819 DE2831819A1 (de) 1978-07-19 1978-07-19 Verfahren zum abscheiden von silicium in feinkristalliner form

Publications (2)

Publication Number Publication Date
JPS5516000A JPS5516000A (en) 1980-02-04
JPS6156163B2 true JPS6156163B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-12-01

Family

ID=6044834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9088679A Granted JPS5516000A (en) 1978-07-19 1979-07-17 Depositing particulate silicon crystal

Country Status (5)

Country Link
US (1) US4255463A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5516000A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2831819A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK302979A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1122595B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04254228A (ja) * 1991-02-05 1992-09-09 Shugo Fuwa 車輛牽引装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173002A (ja) * 1984-02-20 1985-09-06 Sanwa Shoji Kk イエロ−種コ−ンスタ−チの脱色方法
JPH03112525A (ja) * 1989-09-28 1991-05-14 Matsushita Electric Ind Co Ltd 野菜切り機
JP3321890B2 (ja) * 1992-06-23 2002-09-09 ソニー株式会社 半導体結晶の形成方法及び半導体素子
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
US7780938B2 (en) * 2006-04-13 2010-08-24 Cabot Corporation Production of silicon through a closed-loop process
DE102007023041A1 (de) * 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
KR101623458B1 (ko) * 2008-03-26 2016-05-23 지티에이티 코포레이션 화학 증착 반응기의 가스 분배 시스템 및 방법
JP5137670B2 (ja) * 2008-04-23 2013-02-06 信越化学工業株式会社 多結晶シリコンロッドの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123300B (de) * 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
US3496037A (en) * 1967-05-29 1970-02-17 Motorola Inc Semiconductor growth on dielectric substrates
US4087571A (en) * 1971-05-28 1978-05-02 Fairchild Camera And Instrument Corporation Controlled temperature polycrystalline silicon nucleation
JPS5019013U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-15 1975-03-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04254228A (ja) * 1991-02-05 1992-09-09 Shugo Fuwa 車輛牽引装置

Also Published As

Publication number Publication date
US4255463A (en) 1981-03-10
DE2831819A1 (de) 1980-01-31
IT7924411A0 (it) 1979-07-17
DE2831819C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-08-06
IT1122595B (it) 1986-04-23
JPS5516000A (en) 1980-02-04
DK302979A (da) 1980-01-20

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