DK302979A - Fremgangsmaade til udskillelse af silicium i finkrystallinsk form - Google Patents

Fremgangsmaade til udskillelse af silicium i finkrystallinsk form

Info

Publication number
DK302979A
DK302979A DK302979A DK302979A DK302979A DK 302979 A DK302979 A DK 302979A DK 302979 A DK302979 A DK 302979A DK 302979 A DK302979 A DK 302979A DK 302979 A DK302979 A DK 302979A
Authority
DK
Denmark
Prior art keywords
silicone
separation
procedure
crystalline form
fine crystalline
Prior art date
Application number
DK302979A
Other languages
Danish (da)
English (en)
Inventor
U Rucha
W Dietze
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK302979A publication Critical patent/DK302979A/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DK302979A 1978-07-19 1979-07-18 Fremgangsmaade til udskillelse af silicium i finkrystallinsk form DK302979A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782831819 DE2831819A1 (de) 1978-07-19 1978-07-19 Verfahren zum abscheiden von silicium in feinkristalliner form

Publications (1)

Publication Number Publication Date
DK302979A true DK302979A (da) 1980-01-20

Family

ID=6044834

Family Applications (1)

Application Number Title Priority Date Filing Date
DK302979A DK302979A (da) 1978-07-19 1979-07-18 Fremgangsmaade til udskillelse af silicium i finkrystallinsk form

Country Status (5)

Country Link
US (1) US4255463A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5516000A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2831819A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK302979A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1122595B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173002A (ja) * 1984-02-20 1985-09-06 Sanwa Shoji Kk イエロ−種コ−ンスタ−チの脱色方法
JPH03112525A (ja) * 1989-09-28 1991-05-14 Matsushita Electric Ind Co Ltd 野菜切り機
JPH04254228A (ja) * 1991-02-05 1992-09-09 Shugo Fuwa 車輛牽引装置
JP3321890B2 (ja) * 1992-06-23 2002-09-09 ソニー株式会社 半導体結晶の形成方法及び半導体素子
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
DE102007023041A1 (de) 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
EP2271587A1 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Gold-coated polysilicon reactor system and method
WO2009120862A2 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Systems and methods for distributing gas in a chemical vapor deposition reactor
JP5137670B2 (ja) * 2008-04-23 2013-02-06 信越化学工業株式会社 多結晶シリコンロッドの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123300B (de) * 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
US3496037A (en) * 1967-05-29 1970-02-17 Motorola Inc Semiconductor growth on dielectric substrates
US4087571A (en) * 1971-05-28 1978-05-02 Fairchild Camera And Instrument Corporation Controlled temperature polycrystalline silicon nucleation
JPS5019013U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-15 1975-03-03

Also Published As

Publication number Publication date
JPS5516000A (en) 1980-02-04
JPS6156163B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-12-01
DE2831819C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-08-06
IT7924411A0 (it) 1979-07-17
IT1122595B (it) 1986-04-23
US4255463A (en) 1981-03-10
DE2831819A1 (de) 1980-01-31

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment