DK4182A - Fremgangsmaade til udfaeldning af silicium i et apparat for plasmareaktion - Google Patents
Fremgangsmaade til udfaeldning af silicium i et apparat for plasmareaktion Download PDFInfo
- Publication number
- DK4182A DK4182A DK4182A DK4182A DK4182A DK 4182 A DK4182 A DK 4182A DK 4182 A DK4182 A DK 4182A DK 4182 A DK4182 A DK 4182A DK 4182 A DK4182 A DK 4182A
- Authority
- DK
- Denmark
- Prior art keywords
- plasmaraction
- silicone
- deposition
- procedure
- plasmaraction device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Materials For Medical Uses (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/148,095 US4292342A (en) | 1980-05-09 | 1980-05-09 | High pressure plasma deposition of silicon |
PCT/US1981/000449 WO1981003133A1 (en) | 1980-05-09 | 1981-04-06 | High pressure plasma deposition of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
DK4182A true DK4182A (da) | 1982-01-08 |
Family
ID=22524251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK4182A DK4182A (da) | 1980-05-09 | 1982-01-08 | Fremgangsmaade til udfaeldning af silicium i et apparat for plasmareaktion |
Country Status (7)
Country | Link |
---|---|
US (1) | US4292342A (da) |
EP (1) | EP0051628A4 (da) |
JP (1) | JPS57500647A (da) |
DK (1) | DK4182A (da) |
IT (1) | IT1170904B (da) |
NO (1) | NO813770L (da) |
WO (1) | WO1981003133A1 (da) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839312A (en) * | 1978-03-16 | 1989-06-13 | Energy Conversion Devices, Inc. | Fluorinated precursors from which to fabricate amorphous semiconductor material |
DE2941908C2 (de) * | 1979-10-17 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
FR2514033B1 (fr) * | 1981-10-02 | 1985-09-27 | Henaff Louis | Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma |
EP0081599B1 (en) * | 1981-12-10 | 1988-02-24 | Revlon, Inc. | Process for making metallic leafing pigments |
US4505947A (en) * | 1982-07-14 | 1985-03-19 | The Standard Oil Company (Ohio) | Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma |
JPS60200523A (ja) * | 1984-03-26 | 1985-10-11 | Agency Of Ind Science & Technol | シリコン薄膜の製造法 |
DE3516078A1 (de) * | 1985-05-04 | 1986-11-06 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur glimmentladungsaktivierten reaktiven abscheidung von elektrisch leitendem material aus einer gasphase |
US5171491A (en) * | 1986-02-04 | 1992-12-15 | The Carborundum Company | Method of producing near net shape fused cast refractories |
US5135695A (en) * | 1989-12-04 | 1992-08-04 | Board Of Regents The University Of Texas System | Positioning, focusing and monitoring of gas phase selective beam deposition |
US5017317A (en) * | 1989-12-04 | 1991-05-21 | Board Of Regents, The Uni. Of Texas System | Gas phase selective beam deposition |
DE69231293T2 (de) * | 1991-05-10 | 2001-03-15 | Celestech Inc | Verfahren und vorrichtung zur plasmabeschichtung |
US5204144A (en) * | 1991-05-10 | 1993-04-20 | Celestech, Inc. | Method for plasma deposition on apertured substrates |
US5175929A (en) * | 1992-03-04 | 1993-01-05 | General Electric Company | Method for producing articles by chemical vapor deposition |
US5830540A (en) * | 1994-09-15 | 1998-11-03 | Eltron Research, Inc. | Method and apparatus for reactive plasma surfacing |
US5611883A (en) * | 1995-01-09 | 1997-03-18 | Board Of Regents, The University Of Texas System | Joining ceramics and attaching fasteners to ceramics by gas phase selective beam deposition |
WO1996033098A2 (en) * | 1995-04-13 | 1996-10-24 | Xmx Corporation | Gas-impermeable, chemically inert container structure and method of producingthe same |
JP3357675B2 (ja) * | 1996-05-21 | 2002-12-16 | 株式会社 トクヤマ | 多結晶シリコンロッドおよびその製造方法 |
US6173672B1 (en) | 1997-06-06 | 2001-01-16 | Celestech, Inc. | Diamond film deposition on substrate arrays |
US6406760B1 (en) | 1996-06-10 | 2002-06-18 | Celestech, Inc. | Diamond film deposition on substrate arrays |
US6112695A (en) | 1996-10-08 | 2000-09-05 | Nano Scale Surface Systems, Inc. | Apparatus for plasma deposition of a thin film onto the interior surface of a container |
US6689453B2 (en) | 1998-11-24 | 2004-02-10 | Research Foundation Of State University Of New York | Articles with nanocomposite coatings |
US6258417B1 (en) | 1998-11-24 | 2001-07-10 | Research Foundation Of State University Of New York | Method of producing nanocomposite coatings |
US6926876B2 (en) * | 2002-01-17 | 2005-08-09 | Paul V. Kelsey | Plasma production of polycrystalline silicon |
WO2007120776A2 (en) * | 2006-04-14 | 2007-10-25 | Silica Tech, Llc | Plasma deposition apparatus and method for making solar cells |
US20080023070A1 (en) * | 2006-07-28 | 2008-01-31 | Sanjai Sinha | Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells |
DE102008033941A1 (de) * | 2008-07-18 | 2010-01-28 | Innovent E.V. | Verfahren zum Beschichten |
DE102008033939A1 (de) * | 2008-07-18 | 2010-01-21 | Innovent E.V. | Verfahren zur Beschichtung |
DE102009056437B4 (de) * | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH525705A (de) * | 1968-12-24 | 1972-07-31 | Lonza Ag | Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen |
US3865647A (en) * | 1970-09-30 | 1975-02-11 | Siemens Ag | Method for precipitation of semiconductor material |
JPS5650161B2 (da) * | 1972-08-07 | 1981-11-27 | ||
US4003770A (en) * | 1975-03-24 | 1977-01-18 | Monsanto Research Corporation | Plasma spraying process for preparing polycrystalline solar cells |
US4102764A (en) * | 1976-12-29 | 1978-07-25 | Westinghouse Electric Corp. | High purity silicon production by arc heater reduction of silicon intermediates |
US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
-
1980
- 1980-05-09 US US06/148,095 patent/US4292342A/en not_active Expired - Lifetime
-
1981
- 1981-04-06 WO PCT/US1981/000449 patent/WO1981003133A1/en not_active Application Discontinuation
- 1981-04-06 JP JP56501668A patent/JPS57500647A/ja active Pending
- 1981-04-06 EP EP19810901230 patent/EP0051628A4/en not_active Withdrawn
- 1981-04-21 IT IT48316/81A patent/IT1170904B/it active
- 1981-11-09 NO NO813770A patent/NO813770L/no unknown
-
1982
- 1982-01-08 DK DK4182A patent/DK4182A/da not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0051628A4 (en) | 1982-09-15 |
WO1981003133A1 (en) | 1981-11-12 |
EP0051628A1 (en) | 1982-05-19 |
NO813770L (no) | 1981-11-12 |
US4292342A (en) | 1981-09-29 |
JPS57500647A (da) | 1982-04-15 |
IT1170904B (it) | 1987-06-03 |
IT8148316A0 (it) | 1981-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHB | Application shelved due to non-payment |