JPS6154257B2 - - Google Patents

Info

Publication number
JPS6154257B2
JPS6154257B2 JP54154562A JP15456279A JPS6154257B2 JP S6154257 B2 JPS6154257 B2 JP S6154257B2 JP 54154562 A JP54154562 A JP 54154562A JP 15456279 A JP15456279 A JP 15456279A JP S6154257 B2 JPS6154257 B2 JP S6154257B2
Authority
JP
Japan
Prior art keywords
film
sio
semiconductor substrate
oxide film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54154562A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5678142A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15456279A priority Critical patent/JPS5678142A/ja
Publication of JPS5678142A publication Critical patent/JPS5678142A/ja
Publication of JPS6154257B2 publication Critical patent/JPS6154257B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP15456279A 1979-11-29 1979-11-29 Manufacture of semiconductor device Granted JPS5678142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15456279A JPS5678142A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15456279A JPS5678142A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5678142A JPS5678142A (en) 1981-06-26
JPS6154257B2 true JPS6154257B2 (enrdf_load_stackoverflow) 1986-11-21

Family

ID=15586951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15456279A Granted JPS5678142A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5678142A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297043A (ja) * 1989-05-12 1990-12-07 Funai Electric Co Ltd ヘッドシリンダの結露検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297043A (ja) * 1989-05-12 1990-12-07 Funai Electric Co Ltd ヘッドシリンダの結露検出装置

Also Published As

Publication number Publication date
JPS5678142A (en) 1981-06-26

Similar Documents

Publication Publication Date Title
US5393693A (en) "Bird-beak-less" field isolation method
US4755477A (en) Overhang isolation technology
US4178191A (en) Process of making a planar MOS silicon-on-insulating substrate device
US5895252A (en) Field oxidation by implanted oxygen (FIMOX)
JPS6175540A (ja) 集積回路の製法
JPH04346229A (ja) 半導体装置の素子分離方法
US5371036A (en) Locos technology with narrow silicon trench
JPS6154257B2 (enrdf_load_stackoverflow)
US6265286B1 (en) Planarization of LOCOS through recessed reoxidation techniques
US5851901A (en) Method of manufacturing an isolation region of a semiconductor device with advanced planarization
JPH03198339A (ja) 半導体装置の製造方法
JPS63313834A (ja) 半導体集積回路
JPS6092666A (ja) Ｍｉｓトランジスタの製造方法
JPS60258964A (ja) 半導体装置の製造方法
JPS6017929A (ja) 半導体装置の製造方法
JP3007134B2 (ja) 半導体集積回路装置の製造方法
JP3468920B2 (ja) 半導体装置の素子分離方法
JP2550728B2 (ja) 半導体装置の製造方法
JPH0680726B2 (ja) 半導体装置の製造方法
KR970009273B1 (ko) 반도체소자의 필드산화막 제조방법
JPH02232948A (ja) 半導体装置の製造方法
JPH01256147A (ja) 半導体装置の製造方法
JPS59177941A (ja) 素子分離領域の製造方法
JPH02135756A (ja) トレンチアイソレーションを有する半導体装置の製造方法
JPH01136349A (ja) 半導体装置の素子間分離膜形成方法