JPS6154247B2 - - Google Patents
Info
- Publication number
- JPS6154247B2 JPS6154247B2 JP54138547A JP13854779A JPS6154247B2 JP S6154247 B2 JPS6154247 B2 JP S6154247B2 JP 54138547 A JP54138547 A JP 54138547A JP 13854779 A JP13854779 A JP 13854779A JP S6154247 B2 JPS6154247 B2 JP S6154247B2
- Authority
- JP
- Japan
- Prior art keywords
- alignment
- silicon substrate
- oxide film
- silicon
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13854779A JPS5662324A (en) | 1979-10-26 | 1979-10-26 | Semiconductor device position fitting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13854779A JPS5662324A (en) | 1979-10-26 | 1979-10-26 | Semiconductor device position fitting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5662324A JPS5662324A (en) | 1981-05-28 |
| JPS6154247B2 true JPS6154247B2 (de) | 1986-11-21 |
Family
ID=15224695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13854779A Granted JPS5662324A (en) | 1979-10-26 | 1979-10-26 | Semiconductor device position fitting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5662324A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967632A (ja) * | 1982-10-12 | 1984-04-17 | Oki Electric Ind Co Ltd | ウエハ−アライメントマ−クの保存方法 |
| JPS59172722A (ja) * | 1983-03-23 | 1984-09-29 | Oki Electric Ind Co Ltd | アライメントマ−クの製造方法 |
| JPS60110224U (ja) * | 1983-12-28 | 1985-07-26 | 三菱樹脂株式会社 | 蓋付容器 |
| JPH0494522A (ja) * | 1990-08-10 | 1992-03-26 | Mitsubishi Electric Corp | アライメイト・マーク構造 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4722213U (de) * | 1971-04-09 | 1972-11-13 | ||
| JPS5459889A (en) * | 1977-10-21 | 1979-05-14 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-10-26 JP JP13854779A patent/JPS5662324A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4722213U (de) * | 1971-04-09 | 1972-11-13 | ||
| JPS5459889A (en) * | 1977-10-21 | 1979-05-14 | Hitachi Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5662324A (en) | 1981-05-28 |
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