JPS6153855B2 - - Google Patents
Info
- Publication number
- JPS6153855B2 JPS6153855B2 JP5671477A JP5671477A JPS6153855B2 JP S6153855 B2 JPS6153855 B2 JP S6153855B2 JP 5671477 A JP5671477 A JP 5671477A JP 5671477 A JP5671477 A JP 5671477A JP S6153855 B2 JPS6153855 B2 JP S6153855B2
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- insulating film
- field effect
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 description 21
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5671477A JPS53141583A (en) | 1977-05-16 | 1977-05-16 | Integrated-circuit semiconductor device of field effect type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5671477A JPS53141583A (en) | 1977-05-16 | 1977-05-16 | Integrated-circuit semiconductor device of field effect type |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53141583A JPS53141583A (en) | 1978-12-09 |
| JPS6153855B2 true JPS6153855B2 (ko) | 1986-11-19 |
Family
ID=13035140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5671477A Granted JPS53141583A (en) | 1977-05-16 | 1977-05-16 | Integrated-circuit semiconductor device of field effect type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53141583A (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591175A (en) * | 1978-12-27 | 1980-07-10 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS5610773U (ko) * | 1979-07-04 | 1981-01-29 | ||
| JPS5615075A (en) * | 1979-07-19 | 1981-02-13 | Pioneer Electronic Corp | Semiconductor device |
| JPS56114325A (en) * | 1980-02-15 | 1981-09-08 | Nec Corp | Semiconductor device |
| JPS5850747A (ja) * | 1981-09-19 | 1983-03-25 | Toshiba Corp | 接続検知用パタ−ン |
| JPS62294576A (ja) * | 1986-06-13 | 1987-12-22 | Brother Ind Ltd | 印字装置 |
| EP0434234B1 (en) * | 1989-12-22 | 1995-05-24 | AT&T Corp. | MOS devices having improved electrical match |
-
1977
- 1977-05-16 JP JP5671477A patent/JPS53141583A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53141583A (en) | 1978-12-09 |
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