JPS6152584B2 - - Google Patents

Info

Publication number
JPS6152584B2
JPS6152584B2 JP56151987A JP15198781A JPS6152584B2 JP S6152584 B2 JPS6152584 B2 JP S6152584B2 JP 56151987 A JP56151987 A JP 56151987A JP 15198781 A JP15198781 A JP 15198781A JP S6152584 B2 JPS6152584 B2 JP S6152584B2
Authority
JP
Japan
Prior art keywords
region
layer
emitter
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56151987A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5866359A (ja
Inventor
Hiroshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56151987A priority Critical patent/JPS5866359A/ja
Priority to DE8282305023T priority patent/DE3274698D1/de
Priority to EP82305023A priority patent/EP0076105B1/en
Publication of JPS5866359A publication Critical patent/JPS5866359A/ja
Priority to US06/696,884 priority patent/US4590666A/en
Publication of JPS6152584B2 publication Critical patent/JPS6152584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56151987A 1981-09-28 1981-09-28 半導体装置の製造方法 Granted JPS5866359A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56151987A JPS5866359A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法
DE8282305023T DE3274698D1 (en) 1981-09-28 1982-09-23 Method of producing a bipolar transistor
EP82305023A EP0076105B1 (en) 1981-09-28 1982-09-23 Method of producing a bipolar transistor
US06/696,884 US4590666A (en) 1981-09-28 1985-01-31 Method for producing a bipolar transistor having a reduced base region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151987A JPS5866359A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5866359A JPS5866359A (ja) 1983-04-20
JPS6152584B2 true JPS6152584B2 (en, 2012) 1986-11-13

Family

ID=15530578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151987A Granted JPS5866359A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4590666A (en, 2012)
EP (1) EP0076105B1 (en, 2012)
JP (1) JPS5866359A (en, 2012)
DE (1) DE3274698D1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63134885U (en, 2012) * 1987-02-13 1988-09-05

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549293B1 (fr) * 1983-07-13 1986-10-10 Silicium Semiconducteur Ssc Transistor bipolaire haute frequence et son procede de fabrication
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPS61268065A (ja) * 1985-05-23 1986-11-27 Matsushita Electronics Corp 半導体装置
US4721682A (en) * 1985-09-25 1988-01-26 Monolithic Memories, Inc. Isolation and substrate connection for a bipolar integrated circuit
JPH0622238B2 (ja) * 1985-10-02 1994-03-23 沖電気工業株式会社 バイポ−ラ型半導体集積回路装置の製造方法
JPS62290173A (ja) * 1986-06-09 1987-12-17 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US4782030A (en) * 1986-07-09 1988-11-01 Kabushiki Kaisha Toshiba Method of manufacturing bipolar semiconductor device
JPS63107167A (ja) * 1986-10-24 1988-05-12 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US4740478A (en) * 1987-01-30 1988-04-26 Motorola Inc. Integrated circuit method using double implant doping
US4837176A (en) * 1987-01-30 1989-06-06 Motorola Inc. Integrated circuit structures having polycrystalline electrode contacts and process
US5067002A (en) * 1987-01-30 1991-11-19 Motorola, Inc. Integrated circuit structures having polycrystalline electrode contacts
GB2218565B (en) * 1988-05-10 1992-04-01 Stc Plc Varicap diode structure
JPH0226032A (ja) * 1988-07-14 1990-01-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5236851A (en) * 1988-07-14 1993-08-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
JPH0817180B2 (ja) * 1989-06-27 1996-02-21 株式会社東芝 半導体装置の製造方法
JP3393544B2 (ja) * 1997-02-26 2003-04-07 シャープ株式会社 半導体装置の製造方法
JP2001217317A (ja) * 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
DE202010000042U1 (de) 2010-01-14 2010-06-02 Papiersackfabrik Tenax Gmbh & Co. Kg Ventilsack mit Entlüftungsvorrichtung
DE202013102644U1 (de) 2013-06-19 2013-07-24 Papiersackfabrik Tenax Gmbh & Co. Kg Ventilsack mit Entlüftungsvorrichtungen
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1934820A1 (de) * 1969-07-09 1971-01-14 Siemens Ag Verfahren zum Herstellen eines Germanium-Planartransistors
US3686080A (en) * 1971-07-21 1972-08-22 Rca Corp Method of fabrication of semiconductor devices
JPS532129B2 (en, 2012) * 1973-07-23 1978-01-25
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
NL7900280A (nl) * 1979-01-15 1980-07-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4381953A (en) * 1980-03-24 1983-05-03 International Business Machines Corporation Polysilicon-base self-aligned bipolar transistor process
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
US4322883A (en) * 1980-07-08 1982-04-06 International Business Machines Corporation Self-aligned metal process for integrated injection logic integrated circuits
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
JPS5946105B2 (ja) * 1981-10-27 1984-11-10 日本電信電話株式会社 バイポ−ラ型トランジスタ装置及びその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63134885U (en, 2012) * 1987-02-13 1988-09-05

Also Published As

Publication number Publication date
DE3274698D1 (en) 1987-01-22
US4590666A (en) 1986-05-27
JPS5866359A (ja) 1983-04-20
EP0076105B1 (en) 1986-12-10
EP0076105A2 (en) 1983-04-06
EP0076105A3 (en) 1984-08-01

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