JPS6151434B2 - - Google Patents

Info

Publication number
JPS6151434B2
JPS6151434B2 JP54015928A JP1592879A JPS6151434B2 JP S6151434 B2 JPS6151434 B2 JP S6151434B2 JP 54015928 A JP54015928 A JP 54015928A JP 1592879 A JP1592879 A JP 1592879A JP S6151434 B2 JPS6151434 B2 JP S6151434B2
Authority
JP
Japan
Prior art keywords
region
forming
insulating film
source
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54015928A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55108770A (en
Inventor
Susumu Sato
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP1592879A priority Critical patent/JPS55108770A/ja
Publication of JPS55108770A publication Critical patent/JPS55108770A/ja
Publication of JPS6151434B2 publication Critical patent/JPS6151434B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP1592879A 1979-02-14 1979-02-14 Manufacturing method of insulated gate type field effect transistor Granted JPS55108770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1592879A JPS55108770A (en) 1979-02-14 1979-02-14 Manufacturing method of insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1592879A JPS55108770A (en) 1979-02-14 1979-02-14 Manufacturing method of insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55108770A JPS55108770A (en) 1980-08-21
JPS6151434B2 true JPS6151434B2 (enrdf_load_html_response) 1986-11-08

Family

ID=11902428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1592879A Granted JPS55108770A (en) 1979-02-14 1979-02-14 Manufacturing method of insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55108770A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2545762B2 (ja) * 1990-04-13 1996-10-23 日本電装株式会社 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法

Also Published As

Publication number Publication date
JPS55108770A (en) 1980-08-21

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