JPS6151433B2 - - Google Patents

Info

Publication number
JPS6151433B2
JPS6151433B2 JP54015233A JP1523379A JPS6151433B2 JP S6151433 B2 JPS6151433 B2 JP S6151433B2 JP 54015233 A JP54015233 A JP 54015233A JP 1523379 A JP1523379 A JP 1523379A JP S6151433 B2 JPS6151433 B2 JP S6151433B2
Authority
JP
Japan
Prior art keywords
insulating film
region
source
gate insulating
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54015233A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55108769A (en
Inventor
Susumu Sato
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP1523379A priority Critical patent/JPS55108769A/ja
Publication of JPS55108769A publication Critical patent/JPS55108769A/ja
Publication of JPS6151433B2 publication Critical patent/JPS6151433B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP1523379A 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor Granted JPS55108769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1523379A JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1523379A JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55108769A JPS55108769A (en) 1980-08-21
JPS6151433B2 true JPS6151433B2 (enrdf_load_html_response) 1986-11-08

Family

ID=11883139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1523379A Granted JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55108769A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS55108769A (en) 1980-08-21

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