JPS55108769A - Manufacturing method of insulated gate type field effect transistor - Google Patents

Manufacturing method of insulated gate type field effect transistor

Info

Publication number
JPS55108769A
JPS55108769A JP1523379A JP1523379A JPS55108769A JP S55108769 A JPS55108769 A JP S55108769A JP 1523379 A JP1523379 A JP 1523379A JP 1523379 A JP1523379 A JP 1523379A JP S55108769 A JPS55108769 A JP S55108769A
Authority
JP
Japan
Prior art keywords
film
etching
manufacturing
resist
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1523379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6151433B2 (enrdf_load_html_response
Inventor
Susumu Sato
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP1523379A priority Critical patent/JPS55108769A/ja
Publication of JPS55108769A publication Critical patent/JPS55108769A/ja
Publication of JPS6151433B2 publication Critical patent/JPS6151433B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP1523379A 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor Granted JPS55108769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1523379A JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1523379A JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55108769A true JPS55108769A (en) 1980-08-21
JPS6151433B2 JPS6151433B2 (enrdf_load_html_response) 1986-11-08

Family

ID=11883139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1523379A Granted JPS55108769A (en) 1979-02-13 1979-02-13 Manufacturing method of insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55108769A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS6151433B2 (enrdf_load_html_response) 1986-11-08

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