JPS55108770A - Manufacturing method of insulated gate type field effect transistor - Google Patents
Manufacturing method of insulated gate type field effect transistorInfo
- Publication number
- JPS55108770A JPS55108770A JP1592879A JP1592879A JPS55108770A JP S55108770 A JPS55108770 A JP S55108770A JP 1592879 A JP1592879 A JP 1592879A JP 1592879 A JP1592879 A JP 1592879A JP S55108770 A JPS55108770 A JP S55108770A
- Authority
- JP
- Japan
- Prior art keywords
- film
- phosphorus
- oxide film
- region
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1592879A JPS55108770A (en) | 1979-02-14 | 1979-02-14 | Manufacturing method of insulated gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1592879A JPS55108770A (en) | 1979-02-14 | 1979-02-14 | Manufacturing method of insulated gate type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55108770A true JPS55108770A (en) | 1980-08-21 |
| JPS6151434B2 JPS6151434B2 (enrdf_load_html_response) | 1986-11-08 |
Family
ID=11902428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1592879A Granted JPS55108770A (en) | 1979-02-14 | 1979-02-14 | Manufacturing method of insulated gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55108770A (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04212465A (ja) * | 1990-04-13 | 1992-08-04 | Nippondenso Co Ltd | 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法 |
-
1979
- 1979-02-14 JP JP1592879A patent/JPS55108770A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04212465A (ja) * | 1990-04-13 | 1992-08-04 | Nippondenso Co Ltd | 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151434B2 (enrdf_load_html_response) | 1986-11-08 |
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