JPS6150377B2 - - Google Patents
Info
- Publication number
- JPS6150377B2 JPS6150377B2 JP54153418A JP15341879A JPS6150377B2 JP S6150377 B2 JPS6150377 B2 JP S6150377B2 JP 54153418 A JP54153418 A JP 54153418A JP 15341879 A JP15341879 A JP 15341879A JP S6150377 B2 JPS6150377 B2 JP S6150377B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- resist
- ultraviolet rays
- pattern
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15341879A JPS5676530A (en) | 1979-11-27 | 1979-11-27 | Exposure of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15341879A JPS5676530A (en) | 1979-11-27 | 1979-11-27 | Exposure of resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676530A JPS5676530A (en) | 1981-06-24 |
| JPS6150377B2 true JPS6150377B2 (OSRAM) | 1986-11-04 |
Family
ID=15562059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15341879A Granted JPS5676530A (en) | 1979-11-27 | 1979-11-27 | Exposure of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676530A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710390U (OSRAM) * | 1980-06-20 | 1982-01-19 | ||
| JPS5766633A (en) * | 1980-10-13 | 1982-04-22 | Oki Electric Ind Co Ltd | Pattern formation of fine processing resist |
| JPS5839015A (ja) * | 1981-09-01 | 1983-03-07 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS59141230A (ja) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | パタ−ン形成方法 |
| JPS6010624A (ja) * | 1983-06-29 | 1985-01-19 | Mitsubishi Electric Corp | パタ−ン形成方法 |
-
1979
- 1979-11-27 JP JP15341879A patent/JPS5676530A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5676530A (en) | 1981-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4403151A (en) | Method of forming patterns | |
| JPH05289307A (ja) | レチクルおよびレチクル製造方法 | |
| JPS6150377B2 (OSRAM) | ||
| JPH07199482A (ja) | レジストパターン形成方法 | |
| JP2002148809A (ja) | レジスト基板の製造方法及びレジスト基板 | |
| JPH01142721A (ja) | ポジ型感光性パターン形成材料およびパターン形成方法 | |
| JPH0544169B2 (OSRAM) | ||
| JPH06338452A (ja) | レジストパタ−ンの形成方法 | |
| JP3130672B2 (ja) | フォトマスクパターンの形成方法 | |
| JPS588131B2 (ja) | 半導体装置の製造方法 | |
| JPS6156867B2 (OSRAM) | ||
| JPH0511652B2 (OSRAM) | ||
| KR0119272B1 (ko) | 광 스텝퍼와 e-빔 사진전사 혼합 공정방법 | |
| JP2712407B2 (ja) | 2層フォトレジストを用いた微細パターンの形成方法 | |
| JP2598054B2 (ja) | 半導体装置製造方法 | |
| JPS63133628A (ja) | ポジ型フオトレジストの処理方法 | |
| JPS60247948A (ja) | 半導体装置の製造方法 | |
| JPH0550845B2 (OSRAM) | ||
| JPS63157421A (ja) | レジストパタ−ン形成方法 | |
| JPS6255650A (ja) | 基板上への樹脂パタ−ンの形成方法 | |
| JPH0531292B2 (OSRAM) | ||
| JPH03269533A (ja) | フォトマスクの製造方法およびそれに使用する基板 | |
| JPS58145125A (ja) | レジスト・マスクの形成方法 | |
| JPS63181478A (ja) | 半導体装置の製造方法 | |
| JPS6116521A (ja) | レジスト膜除去方法 |