JPS61500513A - グリッチ・ロックアウト回路を有するメモリ装置 - Google Patents

グリッチ・ロックアウト回路を有するメモリ装置

Info

Publication number
JPS61500513A
JPS61500513A JP59504288A JP50428884A JPS61500513A JP S61500513 A JPS61500513 A JP S61500513A JP 59504288 A JP59504288 A JP 59504288A JP 50428884 A JP50428884 A JP 50428884A JP S61500513 A JPS61500513 A JP S61500513A
Authority
JP
Japan
Prior art keywords
bit line
memory device
input
clock
clock phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59504288A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587917B2 (OSRAM
Inventor
コルウイツツ，ケヴイン　デイヴイツド
モエリー，ギルバート　レロイ　ジユニヤ
Original Assignee
アメリカン テレフオン アンド テレグラフ カムパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アメリカン テレフオン アンド テレグラフ カムパニ− filed Critical アメリカン テレフオン アンド テレグラフ カムパニ−
Publication of JPS61500513A publication Critical patent/JPS61500513A/ja
Publication of JPH0587917B2 publication Critical patent/JPH0587917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP59504288A 1983-11-25 1984-11-21 グリッチ・ロックアウト回路を有するメモリ装置 Granted JPS61500513A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US554914 1983-11-25
US06/554,914 US4627032A (en) 1983-11-25 1983-11-25 Glitch lockout circuit for memory array

Publications (2)

Publication Number Publication Date
JPS61500513A true JPS61500513A (ja) 1986-03-20
JPH0587917B2 JPH0587917B2 (OSRAM) 1993-12-20

Family

ID=24215235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59504288A Granted JPS61500513A (ja) 1983-11-25 1984-11-21 グリッチ・ロックアウト回路を有するメモリ装置

Country Status (7)

Country Link
US (1) US4627032A (OSRAM)
EP (2) EP0145357B1 (OSRAM)
JP (1) JPS61500513A (OSRAM)
KR (1) KR920010979B1 (OSRAM)
CA (1) CA1229917A (OSRAM)
DE (1) DE3477301D1 (OSRAM)
WO (1) WO1985002485A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344400A (ja) * 1986-08-08 1988-02-25 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH05198175A (ja) * 1991-09-12 1993-08-06 Motorola Inc セルフタイム化ランダムアクセスメモリ

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727519A (en) * 1985-11-25 1988-02-23 Motorola, Inc. Memory device including a clock generator with process tracking
FR2592539B1 (fr) * 1985-12-31 1988-02-12 Philips Ind Commerciale Reseau programmable en logique dynamique et son application.
JPS62214597A (ja) * 1986-03-17 1987-09-21 Fujitsu Ltd 不揮発性メモリ回路
US4754436A (en) * 1986-08-08 1988-06-28 Texas Instruments Incorporated Sense amplifier for a read only memory cell array
US4785427A (en) * 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
US4789960A (en) * 1987-01-30 1988-12-06 Rca Licensing Corporation Dual port video memory system having semi-synchronous data input and data output
US4815041A (en) * 1987-03-19 1989-03-21 American Telephone And Telegraph Company Current surge elimination for CMOS devices
US4872161A (en) * 1987-03-19 1989-10-03 Matsushita Electric Industrial Co., Ltd. Bus circuit for eliminating undesired voltage amplitude
JPS63237296A (ja) * 1987-03-25 1988-10-03 Toshiba Corp 半導体記憶装置
US4852061A (en) * 1987-04-30 1989-07-25 International Business Machines Corporation High density, high performance register file having improved clocking means
JPH07120225B2 (ja) * 1988-04-15 1995-12-20 富士通株式会社 半導体回路装置
US4879682A (en) * 1988-09-15 1989-11-07 Motorola, Inc. Sense amplifier precharge control
US4926387A (en) * 1988-12-27 1990-05-15 Intel Corporation Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells
GB8923037D0 (en) * 1989-10-12 1989-11-29 Inmos Ltd Timing control for a memory
JP3317746B2 (ja) * 1993-06-18 2002-08-26 富士通株式会社 半導体記憶装置
US5509076A (en) * 1994-05-02 1996-04-16 General Instrument Corporation Of Delaware Apparatus for securing the integrity of a functioning system
EP0698884A1 (en) * 1994-08-24 1996-02-28 Advanced Micro Devices, Inc. Memory array for microprocessor cache
DE69631821D1 (de) * 1996-04-09 2004-04-15 St Microelectronics Srl Schaltung zur Bestimmung der vollständigen Aufladung einer generischen Bitleitung, insbesondere für nichtflüchtige Speicher
US6055587A (en) * 1998-03-27 2000-04-25 Adaptec, Inc, Integrated circuit SCSI I/O cell having signal assertion edge triggered timed glitch filter that defines a strobe masking period to protect the contents of data latches
US6453425B1 (en) 1999-11-23 2002-09-17 Lsi Logic Corporation Method and apparatus for switching clocks presented to synchronous SRAMs
US7888962B1 (en) 2004-07-07 2011-02-15 Cypress Semiconductor Corporation Impedance matching circuit
US8036846B1 (en) 2005-10-20 2011-10-11 Cypress Semiconductor Corporation Variable impedance sense architecture and method
US7286423B2 (en) * 2006-02-27 2007-10-23 Freescale Semiconductor, Inc. Bit line precharge in embedded memory
US7440335B2 (en) * 2006-05-23 2008-10-21 Freescale Semiconductor, Inc. Contention-free hierarchical bit line in embedded memory and method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778784A (en) * 1972-02-14 1973-12-11 Intel Corp Memory system incorporating a memory cell and timing means on a single semiconductor substrate
US3962686A (en) * 1972-05-16 1976-06-08 Nippon Electric Company Limited Memory circuit
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
US4072932A (en) * 1976-08-23 1978-02-07 Texas Instruments Incorporated Clock generator for semiconductor memory
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS6032911B2 (ja) * 1979-07-26 1985-07-31 株式会社東芝 半導体記憶装置
US4339766A (en) * 1979-10-11 1982-07-13 Texas Instruments Incorporated Dummy columns for reducing pattern sensitivity in MOS/LSI dynamic RAM
JPS5665395A (en) * 1979-10-30 1981-06-03 Fujitsu Ltd Bit-line voltage level setting circuit
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
US4327426A (en) * 1980-02-11 1982-04-27 Texas Instruments, Incorporated Column decoder discharge for semiconductor memory
US4363111A (en) * 1980-10-06 1982-12-07 Heightley John D Dummy cell arrangement for an MOS memory
JPS5856287A (ja) * 1981-09-29 1983-04-02 Nec Corp 半導体回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344400A (ja) * 1986-08-08 1988-02-25 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH05198175A (ja) * 1991-09-12 1993-08-06 Motorola Inc セルフタイム化ランダムアクセスメモリ

Also Published As

Publication number Publication date
WO1985002485A1 (en) 1985-06-06
EP0145357B1 (en) 1988-06-01
EP0162083B1 (en) 1989-03-15
EP0145357A3 (en) 1985-07-31
EP0162083A1 (en) 1985-11-27
KR920010979B1 (ko) 1992-12-26
US4627032A (en) 1986-12-02
KR850700177A (ko) 1985-10-25
EP0145357A2 (en) 1985-06-19
JPH0587917B2 (OSRAM) 1993-12-20
CA1229917A (en) 1987-12-01
DE3477301D1 (en) 1989-04-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term