JPS6148771B2 - - Google Patents
Info
- Publication number
- JPS6148771B2 JPS6148771B2 JP10345479A JP10345479A JPS6148771B2 JP S6148771 B2 JPS6148771 B2 JP S6148771B2 JP 10345479 A JP10345479 A JP 10345479A JP 10345479 A JP10345479 A JP 10345479A JP S6148771 B2 JPS6148771 B2 JP S6148771B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- layer
- positive resist
- resist layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 62
- 238000010894 electron beam technology Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10345479A JPS5627929A (en) | 1979-08-14 | 1979-08-14 | Electron beam projection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10345479A JPS5627929A (en) | 1979-08-14 | 1979-08-14 | Electron beam projection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5627929A JPS5627929A (en) | 1981-03-18 |
| JPS6148771B2 true JPS6148771B2 (zh) | 1986-10-25 |
Family
ID=14354464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10345479A Granted JPS5627929A (en) | 1979-08-14 | 1979-08-14 | Electron beam projection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5627929A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000046845A1 (fr) * | 1999-02-02 | 2000-08-10 | Nikon Corporation | Procede pour detecter une marque d'alignement dans un appareil d'exposition aux faisceaux de particules chargees |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5793133U (zh) * | 1980-11-28 | 1982-06-08 | ||
| JPS6066428A (ja) * | 1983-09-21 | 1985-04-16 | Fujitsu Ltd | 電子ビ−ム露光方法 |
| JPH0782978B2 (ja) * | 1985-01-22 | 1995-09-06 | 富士通株式会社 | 半導体装置の製造方法 |
| JPH04101411A (ja) * | 1990-08-20 | 1992-04-02 | Matsushita Electric Ind Co Ltd | 電子線直接描画のアライメント方法 |
-
1979
- 1979-08-14 JP JP10345479A patent/JPS5627929A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000046845A1 (fr) * | 1999-02-02 | 2000-08-10 | Nikon Corporation | Procede pour detecter une marque d'alignement dans un appareil d'exposition aux faisceaux de particules chargees |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5627929A (en) | 1981-03-18 |
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