JPS6146979B2 - - Google Patents
Info
- Publication number
- JPS6146979B2 JPS6146979B2 JP13885583A JP13885583A JPS6146979B2 JP S6146979 B2 JPS6146979 B2 JP S6146979B2 JP 13885583 A JP13885583 A JP 13885583A JP 13885583 A JP13885583 A JP 13885583A JP S6146979 B2 JPS6146979 B2 JP S6146979B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- floating gate
- gate
- control gate
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002955 isolation Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 210000004027 cell Anatomy 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58138855A JPS6031267A (ja) | 1983-07-29 | 1983-07-29 | 半導体記憶装置 |
DE8484104278T DE3482847D1 (de) | 1983-04-18 | 1984-04-16 | Halbleiterspeichervorrichtung mit einem schwebenden gate. |
EP84104278A EP0123249B1 (en) | 1983-04-18 | 1984-04-16 | Semiconductor memory device having a floating gate |
US07/517,543 US5084745A (en) | 1983-04-18 | 1990-04-27 | Semiconductor memory device having a floating gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58138855A JPS6031267A (ja) | 1983-07-29 | 1983-07-29 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6031267A JPS6031267A (ja) | 1985-02-18 |
JPS6146979B2 true JPS6146979B2 (ko) | 1986-10-16 |
Family
ID=15231723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58138855A Granted JPS6031267A (ja) | 1983-04-18 | 1983-07-29 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6031267A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101548B2 (ja) * | 1985-03-30 | 1994-12-12 | 株式会社東芝 | 半導体記憶装置 |
JPH0777078B2 (ja) * | 1987-01-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
-
1983
- 1983-07-29 JP JP58138855A patent/JPS6031267A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6031267A (ja) | 1985-02-18 |
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