JPS6146979B2 - - Google Patents

Info

Publication number
JPS6146979B2
JPS6146979B2 JP13885583A JP13885583A JPS6146979B2 JP S6146979 B2 JPS6146979 B2 JP S6146979B2 JP 13885583 A JP13885583 A JP 13885583A JP 13885583 A JP13885583 A JP 13885583A JP S6146979 B2 JPS6146979 B2 JP S6146979B2
Authority
JP
Japan
Prior art keywords
transistor
floating gate
gate
control gate
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13885583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6031267A (ja
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58138855A priority Critical patent/JPS6031267A/ja
Priority to DE8484104278T priority patent/DE3482847D1/de
Priority to EP84104278A priority patent/EP0123249B1/en
Publication of JPS6031267A publication Critical patent/JPS6031267A/ja
Publication of JPS6146979B2 publication Critical patent/JPS6146979B2/ja
Priority to US07/517,543 priority patent/US5084745A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP58138855A 1983-04-18 1983-07-29 半導体記憶装置 Granted JPS6031267A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58138855A JPS6031267A (ja) 1983-07-29 1983-07-29 半導体記憶装置
DE8484104278T DE3482847D1 (de) 1983-04-18 1984-04-16 Halbleiterspeichervorrichtung mit einem schwebenden gate.
EP84104278A EP0123249B1 (en) 1983-04-18 1984-04-16 Semiconductor memory device having a floating gate
US07/517,543 US5084745A (en) 1983-04-18 1990-04-27 Semiconductor memory device having a floating gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58138855A JPS6031267A (ja) 1983-07-29 1983-07-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6031267A JPS6031267A (ja) 1985-02-18
JPS6146979B2 true JPS6146979B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=15231723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58138855A Granted JPS6031267A (ja) 1983-04-18 1983-07-29 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6031267A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101548B2 (ja) * 1985-03-30 1994-12-12 株式会社東芝 半導体記憶装置
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ

Also Published As

Publication number Publication date
JPS6031267A (ja) 1985-02-18

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