JPS6145390B2 - - Google Patents

Info

Publication number
JPS6145390B2
JPS6145390B2 JP58244089A JP24408983A JPS6145390B2 JP S6145390 B2 JPS6145390 B2 JP S6145390B2 JP 58244089 A JP58244089 A JP 58244089A JP 24408983 A JP24408983 A JP 24408983A JP S6145390 B2 JPS6145390 B2 JP S6145390B2
Authority
JP
Japan
Prior art keywords
impurity region
substrate
insulating film
gate electrode
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58244089A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136369A (ja
Inventor
Toshiharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58244089A priority Critical patent/JPS60136369A/ja
Publication of JPS60136369A publication Critical patent/JPS60136369A/ja
Publication of JPS6145390B2 publication Critical patent/JPS6145390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP58244089A 1983-12-26 1983-12-26 半導体装置及びその製造方法 Granted JPS60136369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58244089A JPS60136369A (ja) 1983-12-26 1983-12-26 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58244089A JPS60136369A (ja) 1983-12-26 1983-12-26 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5040661A Division JPH0831576B2 (ja) 1993-02-05 1993-02-05 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60136369A JPS60136369A (ja) 1985-07-19
JPS6145390B2 true JPS6145390B2 (de) 1986-10-07

Family

ID=17113571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58244089A Granted JPS60136369A (ja) 1983-12-26 1983-12-26 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60136369A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682803B2 (ja) * 1985-09-04 1994-10-19 日本電気株式会社 Ｍｉｓ型半導体記憶装置
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
JPS63244683A (ja) * 1987-03-30 1988-10-12 Mitsubishi Electric Corp 電界効果型半導体装置およびその製造方法
JP2507502B2 (ja) * 1987-12-28 1996-06-12 三菱電機株式会社 半導体装置
JPH02130873A (ja) * 1988-11-10 1990-05-18 Nec Corp 半導体集積回路装置
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JP2757491B2 (ja) * 1989-09-27 1998-05-25 日産自動車 株式会社 半導体装置の製造方法
JPH0482272A (ja) * 1990-07-25 1992-03-16 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
JPH05206394A (ja) * 1992-01-24 1993-08-13 Mitsubishi Electric Corp 電界効果トランジスタおよびその製造方法
US5672524A (en) * 1995-08-01 1997-09-30 Advanced Micro Devices, Inc. Three-dimensional complementary field effect transistor process
US5763310A (en) * 1996-10-08 1998-06-09 Advanced Micro Devices, Inc. Integrated circuit employing simultaneously formed isolation and transistor trenches
JP3788022B2 (ja) * 1998-03-30 2006-06-21 セイコーエプソン株式会社 薄膜トランジスタおよびその製造方法
DE19845003C1 (de) * 1998-09-30 2000-02-10 Siemens Ag Vertikaler Feldeffekttransistor mit innenliegendem ringförmigen Gate und Herstellverfahren
JP2002184980A (ja) * 2000-10-05 2002-06-28 Fuji Electric Co Ltd トレンチ型ラテラルｍｏｓｆｅｔおよびその製造方法
JP2010219326A (ja) * 2009-03-17 2010-09-30 Elpida Memory Inc 半導体記憶装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147271A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147271A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS60136369A (ja) 1985-07-19

Similar Documents

Publication Publication Date Title
JP2510265B2 (ja) 半導体メモリ装置及びその製造方法
US5006910A (en) Semiconductor memory device and method for producing the same
EP0682372A1 (de) DRAM-Bauteil mit oberem und unterem Kondensator und Herstellungsverfahren
JP3132435B2 (ja) 半導体装置の製造方法
JP3272979B2 (ja) 半導体装置
JPS6145390B2 (de)
JP3902831B2 (ja) 半導体メモリ装置及びその製造方法
JP2006073813A (ja) 直接トンネル型半導体記憶装置およびその製造方法
JPH0621389A (ja) 半導体装置及びその製造方法
JPH0715949B2 (ja) Ｄｒａｍセル及びその製造方法
KR100517219B1 (ko) 동적이득메모리셀을갖는dram셀장치및그의제조방법
JPH0576785B2 (de)
JP3421230B2 (ja) 半導体記憶装置およびその製造方法
US7208799B2 (en) Floating body cell dynamic random access memory with optimized body geometry
JPH0365904B2 (de)
JPH077823B2 (ja) 半導体集積回路装置
JPS6340362A (ja) 半導体記憶装置
KR940009613B1 (ko) 반도체 메모리 장치의 제조방법 및 그 구조
JP2564712B2 (ja) 半導体メモリ装置の製造方法
JPH0758214A (ja) 半導体記憶装置
JPH1174475A (ja) 半導体集積回路装置およびその製造方法
KR930000718B1 (ko) 반도체장치의 제조방법
JP3120633B2 (ja) 半導体記憶装置とその製造方法
JPH0555511A (ja) 半導体記憶装置
JPH0575053A (ja) 半導体記憶装置