JPS6142855B2 - - Google Patents

Info

Publication number
JPS6142855B2
JPS6142855B2 JP53043853A JP4385378A JPS6142855B2 JP S6142855 B2 JPS6142855 B2 JP S6142855B2 JP 53043853 A JP53043853 A JP 53043853A JP 4385378 A JP4385378 A JP 4385378A JP S6142855 B2 JPS6142855 B2 JP S6142855B2
Authority
JP
Japan
Prior art keywords
oxygen
wafer
atoms
oxygen concentration
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53043853A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54136274A (en
Inventor
Takanori Hayafuji
Seiji Kawato
Yoshio Aoki
Shoji Wakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4385378A priority Critical patent/JPS54136274A/ja
Publication of JPS54136274A publication Critical patent/JPS54136274A/ja
Publication of JPS6142855B2 publication Critical patent/JPS6142855B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP4385378A 1978-04-14 1978-04-14 Semiconductor device Granted JPS54136274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4385378A JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4385378A JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3784486A Division JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS54136274A JPS54136274A (en) 1979-10-23
JPS6142855B2 true JPS6142855B2 (cs) 1986-09-24

Family

ID=12675261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4385378A Granted JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54136274A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02138443U (cs) * 1989-04-20 1990-11-19

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575364A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Mos integrated circuit device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1977 *
APPLIED PHYSICS LETTERS=1977M2 *
APPLIED PHYSICS LETTERS=1977M7D15 *
JOURNAL OF APPLIED PHYSICS=1975M5 *
SOLID STATE SCIENCE AND TECHNOLOGY=1975M12 *
SOLID-STATE SCIENCE AND TECHNOLOGY=1976M12 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02138443U (cs) * 1989-04-20 1990-11-19

Also Published As

Publication number Publication date
JPS54136274A (en) 1979-10-23

Similar Documents

Publication Publication Date Title
KR19990072884A (ko) 다결정실리콘구조물의제조방법
JPH0469814B2 (cs)
US6580104B1 (en) Elimination of contaminants prior to epitaxy and related structure
JP2998330B2 (ja) Ｓｉｍｏｘ基板及びその製造方法
JPS6142855B2 (cs)
JPH07247197A (ja) 半導体装置とその製造方法
US20010021574A1 (en) Method of manufacturing silicon epitaxial wafer
JPH11204534A (ja) シリコンエピタキシャルウェーハの製造方法
JP4972330B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP3579069B2 (ja) 半導体装置の製造方法
JPH0521448A (ja) 半導体装置の製造方法
JPH0346972B2 (cs)
JP2003100760A (ja) エピタキシャルシリコンウェハおよびその製造方法
JP2014078667A (ja) シリコンエピタキシャルウェーハ及びそれを用いた固体撮像素子の製造方法
JPH0410544A (ja) 半導体装置の製造方法
JPH01235276A (ja) 薄膜半導体装置
KR102858653B1 (ko) 실리콘 웨이퍼 및 에피택셜 실리콘 웨이퍼
JPH0351295B2 (cs)
JPS6249630A (ja) 半導体装置の製造方法
KR100390909B1 (ko) 반도체소자의 게더링 방법
WO2025204274A1 (ja) エピタキシャルウェーハの製造方法
JP2730905B2 (ja) 半導体装置の製造方法
JP2743451B2 (ja) 半導体装置の製造方法
JPS63192223A (ja) 半導体装置の製造方法
KR20250016376A (ko) 실리콘 웨이퍼 및 에피택셜 실리콘 웨이퍼