JPS54136274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54136274A
JPS54136274A JP4385378A JP4385378A JPS54136274A JP S54136274 A JPS54136274 A JP S54136274A JP 4385378 A JP4385378 A JP 4385378A JP 4385378 A JP4385378 A JP 4385378A JP S54136274 A JPS54136274 A JP S54136274A
Authority
JP
Japan
Prior art keywords
crystal
oxygen
taken
oxygen concentration
cyochralshi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4385378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142855B2 (cs
Inventor
Takanori Hayafuji
Seiji Kawato
Yoshio Aoki
Shoji Wakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4385378A priority Critical patent/JPS54136274A/ja
Publication of JPS54136274A publication Critical patent/JPS54136274A/ja
Publication of JPS6142855B2 publication Critical patent/JPS6142855B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP4385378A 1978-04-14 1978-04-14 Semiconductor device Granted JPS54136274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4385378A JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4385378A JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3784486A Division JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS54136274A true JPS54136274A (en) 1979-10-23
JPS6142855B2 JPS6142855B2 (cs) 1986-09-24

Family

ID=12675261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4385378A Granted JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54136274A (cs)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575364A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Mos integrated circuit device
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02138443U (cs) * 1989-04-20 1990-11-19

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1977 *
APPLIED PHYSICS LETTERS=1977M2 *
APPLIED PHYSICS LETTERS=1977M7D15 *
JOURNAL OF APPLIED PHYSICS=1975M5 *
SOLID STATE SCIENCE AND TECHNOLOGY=1975M12 *
SOLID-STATE SCIENCE AND TECHNOLOGY=1976M12 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575364A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Mos integrated circuit device
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same

Also Published As

Publication number Publication date
JPS6142855B2 (cs) 1986-09-24

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