JPS6141255Y2 - - Google Patents
Info
- Publication number
- JPS6141255Y2 JPS6141255Y2 JP18624781U JP18624781U JPS6141255Y2 JP S6141255 Y2 JPS6141255 Y2 JP S6141255Y2 JP 18624781 U JP18624781 U JP 18624781U JP 18624781 U JP18624781 U JP 18624781U JP S6141255 Y2 JPS6141255 Y2 JP S6141255Y2
- Authority
- JP
- Japan
- Prior art keywords
- shield plate
- conductive film
- substrate
- pressure transducer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 229920002545 silicone oil Polymers 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18624781U JPS5892745U (ja) | 1981-12-16 | 1981-12-16 | 半導体圧力変換器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18624781U JPS5892745U (ja) | 1981-12-16 | 1981-12-16 | 半導体圧力変換器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892745U JPS5892745U (ja) | 1983-06-23 |
| JPS6141255Y2 true JPS6141255Y2 (enrdf_load_stackoverflow) | 1986-11-25 |
Family
ID=29988024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18624781U Granted JPS5892745U (ja) | 1981-12-16 | 1981-12-16 | 半導体圧力変換器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892745U (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006064470A (ja) * | 2004-08-25 | 2006-03-09 | Denso Corp | 電気機器制御装置 |
| JP4965274B2 (ja) * | 2007-02-05 | 2012-07-04 | 三菱電機株式会社 | 圧力センサ |
| JP5584876B2 (ja) * | 2009-04-15 | 2014-09-10 | 旭化成エレクトロニクス株式会社 | 磁気センサ |
-
1981
- 1981-12-16 JP JP18624781U patent/JPS5892745U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5892745U (ja) | 1983-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54157092A (en) | Semiconductor integrated circuit device | |
| JPH04127480A (ja) | 高耐圧低抵抗半導体装置及びその製造方法 | |
| JPH10294473A (ja) | 面実装型半導体装置及びその製造方法 | |
| JPS6159852A (ja) | 半導体装置の製造方法 | |
| JPS6141255Y2 (enrdf_load_stackoverflow) | ||
| US3506888A (en) | Voltage-responsive semiconductor capacitor | |
| US4704625A (en) | Capacitor with reduced voltage variability | |
| GB983266A (en) | Semiconductor switching devices | |
| JP2001257316A (ja) | 半導体装置 | |
| JP2586432B2 (ja) | 半導体圧力センサの製造方法 | |
| JPS58102567A (ja) | 半導体圧力変換器 | |
| JPS5654064A (en) | Semiconductor device | |
| JPS58103636A (ja) | 半導体圧力変換器 | |
| JPH02237166A (ja) | 半導体圧力センサ | |
| JPH0644112Y2 (ja) | 半導体圧力センサ | |
| JPH10142089A (ja) | ピエゾ抵抗圧力装置 | |
| JPS624338A (ja) | 半導体装置の製造方法 | |
| JPS58103635A (ja) | 半導体圧力変換器 | |
| JPH03155659A (ja) | 半導体装置 | |
| JPH10190011A (ja) | 高耐圧ダイオード | |
| JPS54111287A (en) | Resin seal planar-structure semiconductor element | |
| JPS5548964A (en) | High-voltage-resisting planar semiconductor device | |
| JPS6118344B2 (enrdf_load_stackoverflow) | ||
| JPH10261787A (ja) | 電力用半導体装置 | |
| TW202539393A (zh) | 半導體裝置 |