JPS6141112B2 - - Google Patents
Info
- Publication number
- JPS6141112B2 JPS6141112B2 JP57231297A JP23129782A JPS6141112B2 JP S6141112 B2 JPS6141112 B2 JP S6141112B2 JP 57231297 A JP57231297 A JP 57231297A JP 23129782 A JP23129782 A JP 23129782A JP S6141112 B2 JPS6141112 B2 JP S6141112B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- sputtering
- gas
- film
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- 239000005083 Zinc sulfide Substances 0.000 description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231297A JPS59119697A (ja) | 1982-12-27 | 1982-12-27 | Ｅｌ薄膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231297A JPS59119697A (ja) | 1982-12-27 | 1982-12-27 | Ｅｌ薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119697A JPS59119697A (ja) | 1984-07-10 |
| JPS6141112B2 true JPS6141112B2 (fr) | 1986-09-12 |
Family
ID=16921400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57231297A Granted JPS59119697A (ja) | 1982-12-27 | 1982-12-27 | Ｅｌ薄膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119697A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01109004U (fr) * | 1988-01-14 | 1989-07-24 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61170561A (ja) * | 1985-01-25 | 1986-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 高融点金属膜形成方法 |
| JPH0634389B2 (ja) * | 1985-05-23 | 1994-05-02 | 松下電器産業株式会社 | 薄膜発光素子の製造法 |
| JPH02182873A (ja) * | 1989-01-10 | 1990-07-17 | Seiko Epson Corp | 薄膜の製造方法 |
| US5853552A (en) * | 1993-09-09 | 1998-12-29 | Nippondenso Co., Ltd. | Process for the production of electroluminescence element, electroluminescence element |
-
1982
- 1982-12-27 JP JP57231297A patent/JPS59119697A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01109004U (fr) * | 1988-01-14 | 1989-07-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59119697A (ja) | 1984-07-10 |
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