JPS6140034B2 - - Google Patents
Info
- Publication number
- JPS6140034B2 JPS6140034B2 JP2203181A JP2203181A JPS6140034B2 JP S6140034 B2 JPS6140034 B2 JP S6140034B2 JP 2203181 A JP2203181 A JP 2203181A JP 2203181 A JP2203181 A JP 2203181A JP S6140034 B2 JPS6140034 B2 JP S6140034B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- film
- substrate
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 12
- 238000006552 photochemical reaction Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 18
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultraviolet light
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2203181A JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2203181A JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57136932A JPS57136932A (en) | 1982-08-24 |
JPS6140034B2 true JPS6140034B2 (enrdf_load_stackoverflow) | 1986-09-06 |
Family
ID=12071601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2203181A Granted JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57136932A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06181423A (ja) * | 1992-12-14 | 1994-06-28 | Kawasaki Steel Corp | ディジタルフィルタ |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5982720A (ja) * | 1982-11-02 | 1984-05-12 | Nec Corp | 光気相成長法 |
JPS59182520A (ja) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | 光cvd法 |
JP4690148B2 (ja) * | 2005-09-01 | 2011-06-01 | 株式会社アルバック | 有機薄膜製造方法および光cvd装置 |
-
1981
- 1981-02-17 JP JP2203181A patent/JPS57136932A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06181423A (ja) * | 1992-12-14 | 1994-06-28 | Kawasaki Steel Corp | ディジタルフィルタ |
Also Published As
Publication number | Publication date |
---|---|
JPS57136932A (en) | 1982-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4421592A (en) | Plasma enhanced deposition of semiconductors | |
JPS5747706A (en) | Lump of silicon nitride containing ti and its manufacture | |
US4501769A (en) | Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed | |
JPS6140035B2 (enrdf_load_stackoverflow) | ||
JPS6043485A (ja) | アモルフアスシリコン膜の形成方法 | |
JPH02258689A (ja) | 結晶質薄膜の形成方法 | |
JPS6054919B2 (ja) | 低圧反応装置 | |
JPS6140034B2 (enrdf_load_stackoverflow) | ||
Kaneko et al. | Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactor | |
JPS6177695A (ja) | 気相成長方法 | |
US4609424A (en) | Plasma enhanced deposition of semiconductors | |
US3152932A (en) | Reduction in situ of a dipolar molecular gas adhering to a substrate | |
JPS61149477A (ja) | 窒化ホウ素膜の形成方法 | |
JPS5953674A (ja) | 化学蒸着法 | |
JPS6138269B2 (enrdf_load_stackoverflow) | ||
JPS61127119A (ja) | シリコン結晶の成長方法 | |
JPS6225256B2 (enrdf_load_stackoverflow) | ||
JPH0360918B2 (enrdf_load_stackoverflow) | ||
JPS5957909A (ja) | アモルフアスシリコン膜の形成方法 | |
JP2618408B2 (ja) | 単結晶合金膜の製法 | |
JPS5921863Y2 (ja) | 気相成長用反応管 | |
JPS6086274A (ja) | 多結晶シリコン膜の製造方法 | |
JPH027423A (ja) | 化学的気相成長法により、高融点金属又はそのシリサイドを析出する方法 | |
JPS6278192A (ja) | n型単結晶薄膜の製造方法 | |
JPS6278191A (ja) | 単結晶薄膜の製造方法 |