JPS6139575A - 半導体整流装置 - Google Patents

半導体整流装置

Info

Publication number
JPS6139575A
JPS6139575A JP14140185A JP14140185A JPS6139575A JP S6139575 A JPS6139575 A JP S6139575A JP 14140185 A JP14140185 A JP 14140185A JP 14140185 A JP14140185 A JP 14140185A JP S6139575 A JPS6139575 A JP S6139575A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
electrode
rectifier
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14140185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227553B2 (OSRAM
Inventor
Yoshihito Amamiya
好仁 雨宮
Takayuki Sugata
孝之 菅田
Yoshihiko Mizushima
宜彦 水島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14140185A priority Critical patent/JPS6139575A/ja
Publication of JPS6139575A publication Critical patent/JPS6139575A/ja
Publication of JPS6227553B2 publication Critical patent/JPS6227553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP14140185A 1985-06-27 1985-06-27 半導体整流装置 Granted JPS6139575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14140185A JPS6139575A (ja) 1985-06-27 1985-06-27 半導体整流装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14140185A JPS6139575A (ja) 1985-06-27 1985-06-27 半導体整流装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11321679A Division JPS5637683A (en) 1979-05-07 1979-09-04 Semiconductor rectifying device

Publications (2)

Publication Number Publication Date
JPS6139575A true JPS6139575A (ja) 1986-02-25
JPS6227553B2 JPS6227553B2 (OSRAM) 1987-06-15

Family

ID=15291144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14140185A Granted JPS6139575A (ja) 1985-06-27 1985-06-27 半導体整流装置

Country Status (1)

Country Link
JP (1) JPS6139575A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063428A (en) * 1986-09-30 1991-11-05 eupec Europaische Gesellschaft fur Leistungshalbleiter mbH & Co. KG Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone
EP1047135A3 (en) * 1999-04-22 2002-04-17 Intersil Corporation Fast turn-off power semiconductor devices
JP2006086457A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Works Ltd 磁気検出装置
JP2009076642A (ja) * 2007-09-20 2009-04-09 Mitsubishi Electric Corp 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063428A (en) * 1986-09-30 1991-11-05 eupec Europaische Gesellschaft fur Leistungshalbleiter mbH & Co. KG Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone
EP1047135A3 (en) * 1999-04-22 2002-04-17 Intersil Corporation Fast turn-off power semiconductor devices
JP2006086457A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Works Ltd 磁気検出装置
JP2009076642A (ja) * 2007-09-20 2009-04-09 Mitsubishi Electric Corp 半導体装置
US8829519B2 (en) 2007-09-20 2014-09-09 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
JPS6227553B2 (OSRAM) 1987-06-15

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