JPS6227553B2 - - Google Patents
Info
- Publication number
- JPS6227553B2 JPS6227553B2 JP60141401A JP14140185A JPS6227553B2 JP S6227553 B2 JPS6227553 B2 JP S6227553B2 JP 60141401 A JP60141401 A JP 60141401A JP 14140185 A JP14140185 A JP 14140185A JP S6227553 B2 JPS6227553 B2 JP S6227553B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- rectifier
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14140185A JPS6139575A (ja) | 1985-06-27 | 1985-06-27 | 半導体整流装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14140185A JPS6139575A (ja) | 1985-06-27 | 1985-06-27 | 半導体整流装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11321679A Division JPS5637683A (en) | 1979-05-07 | 1979-09-04 | Semiconductor rectifying device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6139575A JPS6139575A (ja) | 1986-02-25 |
| JPS6227553B2 true JPS6227553B2 (OSRAM) | 1987-06-15 |
Family
ID=15291144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14140185A Granted JPS6139575A (ja) | 1985-06-27 | 1985-06-27 | 半導体整流装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6139575A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
| KR20010014774A (ko) * | 1999-04-22 | 2001-02-26 | 인터실 코포레이션 | 빠른 턴-오프 파워 반도체 디바이스 |
| JP2006086457A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Works Ltd | 磁気検出装置 |
| JP5194273B2 (ja) | 2007-09-20 | 2013-05-08 | 三菱電機株式会社 | 半導体装置 |
-
1985
- 1985-06-27 JP JP14140185A patent/JPS6139575A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139575A (ja) | 1986-02-25 |
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