JPS6135626B2 - - Google Patents
Info
- Publication number
- JPS6135626B2 JPS6135626B2 JP1666779A JP1666779A JPS6135626B2 JP S6135626 B2 JPS6135626 B2 JP S6135626B2 JP 1666779 A JP1666779 A JP 1666779A JP 1666779 A JP1666779 A JP 1666779A JP S6135626 B2 JPS6135626 B2 JP S6135626B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- detector
- film
- thin film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 49
- 239000010409 thin film Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 10
- 238000000992 sputter etching Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 14
- 239000010931 gold Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GYICFMAUMDNZTL-UHFFFAOYSA-N calcium germanium Chemical compound [Ca].[Ge] GYICFMAUMDNZTL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1666779A JPS55108988A (en) | 1979-02-14 | 1979-02-14 | Production of magnetic detector |
| US06/036,983 US4302822A (en) | 1978-05-12 | 1979-05-08 | Thin-film magnetic bubble domain detection device and process for manufacturing the same |
| US06/266,105 US4390404A (en) | 1978-05-12 | 1981-05-21 | Process for manufacture of thin-film magnetic bubble domain detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1666779A JPS55108988A (en) | 1979-02-14 | 1979-02-14 | Production of magnetic detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55108988A JPS55108988A (en) | 1980-08-21 |
| JPS6135626B2 true JPS6135626B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-14 |
Family
ID=11922667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1666779A Granted JPS55108988A (en) | 1978-05-12 | 1979-02-14 | Production of magnetic detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55108988A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1979
- 1979-02-14 JP JP1666779A patent/JPS55108988A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55108988A (en) | 1980-08-21 |