JPS6133257B2 - - Google Patents

Info

Publication number
JPS6133257B2
JPS6133257B2 JP53045683A JP4568378A JPS6133257B2 JP S6133257 B2 JPS6133257 B2 JP S6133257B2 JP 53045683 A JP53045683 A JP 53045683A JP 4568378 A JP4568378 A JP 4568378A JP S6133257 B2 JPS6133257 B2 JP S6133257B2
Authority
JP
Japan
Prior art keywords
layer
platinum
semiconductor
forming
silicide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53045683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54137273A (en
Inventor
Shigeyuki Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4568378A priority Critical patent/JPS54137273A/ja
Publication of JPS54137273A publication Critical patent/JPS54137273A/ja
Publication of JPS6133257B2 publication Critical patent/JPS6133257B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Dicing (AREA)
JP4568378A 1978-04-17 1978-04-17 Semiconductor device Granted JPS54137273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4568378A JPS54137273A (en) 1978-04-17 1978-04-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4568378A JPS54137273A (en) 1978-04-17 1978-04-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137273A JPS54137273A (en) 1979-10-24
JPS6133257B2 true JPS6133257B2 (enrdf_load_stackoverflow) 1986-08-01

Family

ID=12726185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4568378A Granted JPS54137273A (en) 1978-04-17 1978-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137273A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780719A (en) * 1980-11-07 1982-05-20 Fujitsu Ltd Semiconductor device
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926740A (enrdf_load_stackoverflow) * 1972-07-04 1974-03-09

Also Published As

Publication number Publication date
JPS54137273A (en) 1979-10-24

Similar Documents

Publication Publication Date Title
US5656860A (en) Wiring structure for semiconductor device and fabrication method therefor
US6413863B1 (en) Method to resolve the passivation surface roughness during formation of the AlCu pad for the copper process
JPH01202841A (ja) 半導体集積回路装置及びその製造方法
EP1864331B1 (en) Process for forming a planar diode using one mask
JPS6364057B2 (enrdf_load_stackoverflow)
JPS6133257B2 (enrdf_load_stackoverflow)
JP3534269B2 (ja) 半導体装置及びその製造方法
JPS5950105B2 (ja) 半導体装置
JPS60176231A (ja) 化合物半導体素子の電極の形成方法
JPH05121727A (ja) 半導体装置及びその製造方法
JP3413653B2 (ja) 半導体装置
JP3189399B2 (ja) 半導体装置の製造方法
JPS62241373A (ja) 半導体装置
KR960026205A (ko) 금속 배선 콘택 제조방법
KR100197129B1 (ko) 반도체 소자의 금속배선 형성방법
JPH01268150A (ja) 半導体装置
JPS62262443A (ja) 半導体装置およびその製造方法
KR930001557B1 (ko) 반도체 소자 접촉창의 메탈패턴 제조방법
KR0137813B1 (ko) 모스 트랜지스터(mosfet)의 금속 배선 형성 방법
JPS60219772A (ja) 半導体装置の製造方法
JPS61224415A (ja) 半導体装置の製造方法
JPH05343408A (ja) Ｔａｂ用半導体チップ
JPH01298744A (ja) 半導体装置の製造方法
JPH0320898B2 (enrdf_load_stackoverflow)
JPS59149067A (ja) 半導体装置