JPS613088B2 - - Google Patents

Info

Publication number
JPS613088B2
JPS613088B2 JP51073922A JP7392276A JPS613088B2 JP S613088 B2 JPS613088 B2 JP S613088B2 JP 51073922 A JP51073922 A JP 51073922A JP 7392276 A JP7392276 A JP 7392276A JP S613088 B2 JPS613088 B2 JP S613088B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51073922A
Other languages
Japanese (ja)
Other versions
JPS523381A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS523381A publication Critical patent/JPS523381A/ja
Publication of JPS613088B2 publication Critical patent/JPS613088B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69391—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/69433—
    • H10P36/03—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP51073922A 1975-06-24 1976-06-24 Method of treating semiconductor element Granted JPS523381A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/589,945 US3997368A (en) 1975-06-24 1975-06-24 Elimination of stacking faults in silicon devices: a gettering process

Publications (2)

Publication Number Publication Date
JPS523381A JPS523381A (en) 1977-01-11
JPS613088B2 true JPS613088B2 (enExample) 1986-01-30

Family

ID=24360225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51073922A Granted JPS523381A (en) 1975-06-24 1976-06-24 Method of treating semiconductor element

Country Status (11)

Country Link
US (1) US3997368A (enExample)
JP (1) JPS523381A (enExample)
BE (1) BE843164A (enExample)
CA (1) CA1046166A (enExample)
DE (1) DE2628087A1 (enExample)
ES (1) ES449145A1 (enExample)
FR (1) FR2317769A1 (enExample)
GB (1) GB1547897A (enExample)
IT (1) IT1062377B (enExample)
NL (1) NL7606846A (enExample)
SE (1) SE414562B (enExample)

Families Citing this family (61)

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DE2537464A1 (de) * 1975-08-22 1977-03-03 Wacker Chemitronic Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben
JPS5297666A (en) * 1976-02-12 1977-08-16 Hitachi Ltd Production of semiconductor device containing pn junctions
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
DE2644208C3 (de) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage
US4120706A (en) * 1977-09-16 1978-10-17 Harris Corporation Heteroepitaxial deposition of gap on silicon substrates
US4131487A (en) * 1977-10-26 1978-12-26 Western Electric Company, Inc. Gettering semiconductor wafers with a high energy laser beam
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
GB2007430B (en) * 1977-11-03 1982-03-03 Western Electric Co Semicinductor device and fabrication method
JPS54110783A (en) * 1978-02-20 1979-08-30 Hitachi Ltd Semiconductor substrate and its manufacture
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5617011A (en) * 1979-07-23 1981-02-18 Toshiba Corp Semiconductor device and manufacture thereof
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
JPS5762538A (en) * 1980-10-01 1982-04-15 Nec Corp Manufacture of semiconductor device
IL64724A0 (en) * 1981-02-17 1982-03-31 Robins Co Inc A H 2-amino-3-(halobenzoyl)-methylphenylacetic acids and esters and salts thereof and pharmaceutical compositions containing them
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS60133734A (ja) * 1983-12-21 1985-07-16 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60157228A (ja) * 1984-01-26 1985-08-17 Fujitsu Ltd 半導体ウエハ−
JPS6124240A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 半導体基板
US4589928A (en) * 1984-08-21 1986-05-20 At&T Bell Laboratories Method of making semiconductor integrated circuits having backside gettered with phosphorus
US4659400A (en) * 1985-06-27 1987-04-21 General Instrument Corp. Method for forming high yield epitaxial wafers
US4830984A (en) * 1987-08-19 1989-05-16 Texas Instruments Incorporated Method for heteroepitaxial growth using tensioning layer on rear substrate surface
DE68925879T2 (de) * 1988-12-21 1996-10-02 At & T Corp Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide
US5229306A (en) * 1989-12-27 1993-07-20 Texas Instruments Incorporated Backside gettering method employing a monocrystalline germanium-silicon layer
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
US5223734A (en) * 1991-12-18 1993-06-29 Micron Technology, Inc. Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US5562770A (en) * 1994-11-22 1996-10-08 International Business Machines Corporation Semiconductor manufacturing process for low dislocation defects
JP3242566B2 (ja) * 1995-04-27 2001-12-25 富士通株式会社 分析試料の調製方法、不純物の分析方法及び高純度燐酸の調製方法ならびに半導体装置の製造方法
CN100595351C (zh) * 1997-04-09 2010-03-24 Memc电子材料有限公司 低缺陷密度、自间隙原子为主的硅
DE69806369T2 (de) * 1997-04-09 2003-07-10 Memc Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH10321635A (ja) * 1997-05-16 1998-12-04 Nec Corp 半導体装置及びその製造方法
RU2124784C1 (ru) * 1997-09-29 1999-01-10 Мокров Александр Борисович Способ устранения структурных дефектов в твердых телах
JP3690563B2 (ja) * 1998-04-28 2005-08-31 富士通株式会社 シリコン基板の評価方法及び半導体装置の製造方法
DE69901115T2 (de) * 1998-06-26 2002-12-19 Memc Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
US6284039B1 (en) * 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6358821B1 (en) 2000-07-19 2002-03-19 Chartered Semiconductor Manufacturing Inc. Method of copper transport prevention by a sputtered gettering layer on backside of wafer
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
JP4439810B2 (ja) * 2001-01-26 2010-03-24 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 酸化誘起積層欠陥を実質的に有さない空孔優勢コアを有する低欠陥密度シリコン
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
US7495254B2 (en) * 2005-08-30 2009-02-24 International Business Machines Corporation Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices
TWI404836B (zh) 2006-05-19 2013-08-11 Ｍｅｍｃ電子材料公司 控制由單晶矽在卓式成長過程側向表面產生的聚集點缺陷及氧團簇的形成
CN102933549B (zh) 2010-06-15 2015-08-12 巴斯夫欧洲公司 制备环状叔甲基胺的方法
US8637668B2 (en) 2010-06-15 2014-01-28 Basf Se Process for preparing a cyclic tertiary methylamine
WO2012049101A1 (de) 2010-10-14 2012-04-19 Basf Se Verfahren zur herstellung eines zyklischen tertiären amins
US8933223B2 (en) 2010-10-14 2015-01-13 Basf Se Process for preparing a cyclic tertiary amine
EP2632909B1 (de) 2010-10-29 2015-02-25 Basf Se Verfahren zur herstellung von 1,4-bishydroxyethyl-piperazin
US8436169B2 (en) 2010-10-29 2013-05-07 Basf Se Process for preparing 1,4-bishydroxyethylpiperazine
US8884015B2 (en) 2012-06-01 2014-11-11 Basf Se Process for the preparation of a mono-N-alkypiperazine
HUE027611T2 (en) 2012-06-01 2016-10-28 Basf Se Process for the preparation of monoalkyl piperazines
US8981093B2 (en) 2012-06-06 2015-03-17 Basf Se Process for preparing piperazine
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
US10937665B2 (en) * 2016-09-30 2021-03-02 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
RU2680606C1 (ru) * 2018-01-23 2019-02-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковых структур
JP7476039B2 (ja) 2020-09-02 2024-04-30 キオクシア株式会社 半導体装置の検査装置、及び、半導体装置の検査方法

Family Cites Families (8)

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BE636324A (enExample) * 1962-08-28
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
US3494809A (en) * 1967-06-05 1970-02-10 Honeywell Inc Semiconductor processing
US3579815A (en) * 1969-08-20 1971-05-25 Gen Electric Process for wafer fabrication of high blocking voltage silicon elements
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
US3806371A (en) * 1971-07-28 1974-04-23 Motorola Inc Method of making complementary monolithic insulated gate field effect transistors having low threshold voltage and low leakage current
JPS49100961A (enExample) * 1973-01-30 1974-09-24
JPS5028753A (enExample) * 1973-07-13 1975-03-24

Also Published As

Publication number Publication date
DE2628087C2 (enExample) 1988-08-04
FR2317769B1 (enExample) 1980-10-24
NL7606846A (nl) 1976-12-28
DE2628087A1 (de) 1977-01-20
BE843164A (fr) 1976-10-18
IT1062377B (it) 1984-10-10
US3997368A (en) 1976-12-14
SE414562B (sv) 1980-08-04
FR2317769A1 (fr) 1977-02-04
SE7606869L (sv) 1976-12-25
ES449145A1 (es) 1977-12-01
GB1547897A (en) 1979-06-27
CA1046166A (en) 1979-01-09
JPS523381A (en) 1977-01-11

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