JPS6129558B2 - - Google Patents

Info

Publication number
JPS6129558B2
JPS6129558B2 JP52146273A JP14627377A JPS6129558B2 JP S6129558 B2 JPS6129558 B2 JP S6129558B2 JP 52146273 A JP52146273 A JP 52146273A JP 14627377 A JP14627377 A JP 14627377A JP S6129558 B2 JPS6129558 B2 JP S6129558B2
Authority
JP
Japan
Prior art keywords
region
type
gate
buried
gate region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52146273A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5478675A (en
Inventor
Hideaki Yoshimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14627377A priority Critical patent/JPS5478675A/ja
Publication of JPS5478675A publication Critical patent/JPS5478675A/ja
Publication of JPS6129558B2 publication Critical patent/JPS6129558B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14627377A 1977-12-05 1977-12-05 Junction-type field effect transistor Granted JPS5478675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14627377A JPS5478675A (en) 1977-12-05 1977-12-05 Junction-type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14627377A JPS5478675A (en) 1977-12-05 1977-12-05 Junction-type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5478675A JPS5478675A (en) 1979-06-22
JPS6129558B2 true JPS6129558B2 (enrdf_load_html_response) 1986-07-07

Family

ID=15403997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14627377A Granted JPS5478675A (en) 1977-12-05 1977-12-05 Junction-type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5478675A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (ja) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 二重注入電界効果トランジスタ
JP4848591B2 (ja) * 2001-03-30 2011-12-28 株式会社デンソー 炭化珪素半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911076A (enrdf_load_html_response) * 1972-05-25 1974-01-31
JPS5916427B2 (ja) * 1975-10-06 1984-04-16 ソニー株式会社 接合型電界効果トランジスタ
JPS6055995B2 (ja) * 1976-04-20 1985-12-07 日本電気株式会社 接合型電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5478675A (en) 1979-06-22

Similar Documents

Publication Publication Date Title
US4396930A (en) Compact MOSFET device with reduced plurality of wire contacts
JPS6038877B2 (ja) 半導体装置の製法
KR880006781A (ko) 반도체 집적회로 및 그 제조방법
JP3152959B2 (ja) 半導体装置及びその製造方法
JPH0518266B2 (enrdf_load_html_response)
US4507846A (en) Method for making complementary MOS semiconductor devices
JPH03789B2 (enrdf_load_html_response)
JPH06334189A (ja) 電力ｍｏｓ装置用集積構造電流感知抵抗
JPS6119164A (ja) 相補型集積回路とその製造方法
JP3489602B2 (ja) 半導体装置およびその製造方法
JPS6129558B2 (enrdf_load_html_response)
JPS60217657A (ja) 半導体集積回路装置の製造方法
JPS5947757A (ja) 半導体集積回路装置とその製造法
JP3192857B2 (ja) 縦型ｍｏｓ半導体装置及びその製造方法
JPS61255069A (ja) 絶縁ゲ−ト型電界効果トランジスタ
JPH0870122A (ja) Ｍｏｓトランジスタ及びその製造方法
JPS62229880A (ja) 半導体装置及びその製造方法
JPS6055995B2 (ja) 接合型電界効果トランジスタ
JPS6136390B2 (enrdf_load_html_response)
JPH0728043B2 (ja) 半導体装置
JPS605068B2 (ja) Ｍｏｓ形半導体装置
JPH0121570Y2 (enrdf_load_html_response)
JPS625344B2 (enrdf_load_html_response)
JPH0213829B2 (enrdf_load_html_response)
JP3467288B2 (ja) バイポーラ動作モードが最適化された垂直接合形電界効果トランジスタ及びその製造方法