JPS6127907B2 - - Google Patents
Info
- Publication number
- JPS6127907B2 JPS6127907B2 JP10866380A JP10866380A JPS6127907B2 JP S6127907 B2 JPS6127907 B2 JP S6127907B2 JP 10866380 A JP10866380 A JP 10866380A JP 10866380 A JP10866380 A JP 10866380A JP S6127907 B2 JPS6127907 B2 JP S6127907B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- polycrystalline silicon
- metal
- layer
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 239000010410 layer Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10866380A JPS5732654A (en) | 1980-08-07 | 1980-08-07 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10866380A JPS5732654A (en) | 1980-08-07 | 1980-08-07 | Semiconductor integrated circuit device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9494887A Division JPS63132455A (ja) | 1987-04-17 | 1987-04-17 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732654A JPS5732654A (en) | 1982-02-22 |
| JPS6127907B2 true JPS6127907B2 (US07754267-20100713-C00017.png) | 1986-06-27 |
Family
ID=14490516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10866380A Granted JPS5732654A (en) | 1980-08-07 | 1980-08-07 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732654A (US07754267-20100713-C00017.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148703U (US07754267-20100713-C00017.png) * | 1986-03-12 | 1987-09-19 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6146050A (ja) * | 1984-08-10 | 1986-03-06 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
| US4610742A (en) * | 1984-11-15 | 1986-09-09 | Teepak, Inc. | Methods and materials for splicing tubular food casings |
-
1980
- 1980-08-07 JP JP10866380A patent/JPS5732654A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148703U (US07754267-20100713-C00017.png) * | 1986-03-12 | 1987-09-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5732654A (en) | 1982-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3987847B2 (ja) | Ｍｉｍ構造抵抗体を搭載した半導体装置 | |
| JP3116360B2 (ja) | 自己整合型コンタクトホールの形成方法及び半導体装置 | |
| KR950034789A (ko) | 반도체 집적회로장치 및 그 제조방법 | |
| US6133641A (en) | Semiconductor substrate and method of manufacturing semiconductor device | |
| JP2578577B2 (ja) | コンタクトホール形成方法 | |
| JPH05175337A (ja) | Ｖｌｓｉ回路の導体路配置 | |
| US6429521B1 (en) | Semiconductor integrated circuit device and its manufacturing method | |
| JPS6127907B2 (US07754267-20100713-C00017.png) | ||
| JP2752863B2 (ja) | 半導体装置 | |
| JPS6366060B2 (US07754267-20100713-C00017.png) | ||
| JPS63240045A (ja) | 半導体装置 | |
| JPH08330518A (ja) | 半導体集積回路及びその製造方法 | |
| JP2508831B2 (ja) | 半導体装置 | |
| KR100200687B1 (ko) | 새로운 패드층을 구비하는 반도체장치 | |
| WO2022052558A1 (zh) | 半导体结构及其制作方法 | |
| JPS6148779B2 (US07754267-20100713-C00017.png) | ||
| US10665544B2 (en) | Semiconductor device including conductive patterns | |
| JP2692401B2 (ja) | 薄膜コンデンサ | |
| JP4218926B2 (ja) | 半導体装置及びその製造方法 | |
| US6278151B1 (en) | Semiconductor device having wiring detour around step | |
| KR100198635B1 (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| KR0122516B1 (ko) | 반도체 소자의 금속배선 콘택 제조방법 | |
| JPH05343546A (ja) | 半導体集積回路 | |
| KR960006703B1 (ko) | 반도체 소자의 배선 제조방법 | |
| KR0132431Y1 (ko) | 반도체소자 |
