JPS6127896B2 - - Google Patents
Info
- Publication number
- JPS6127896B2 JPS6127896B2 JP12369279A JP12369279A JPS6127896B2 JP S6127896 B2 JPS6127896 B2 JP S6127896B2 JP 12369279 A JP12369279 A JP 12369279A JP 12369279 A JP12369279 A JP 12369279A JP S6127896 B2 JPS6127896 B2 JP S6127896B2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- joint
- furnace
- core tube
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000012856 packing Methods 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 230000006378 damage Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12369279A JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12369279A JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5648130A JPS5648130A (en) | 1981-05-01 |
| JPS6127896B2 true JPS6127896B2 (fr) | 1986-06-27 |
Family
ID=14866955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12369279A Granted JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5648130A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58418U (ja) * | 1981-06-24 | 1983-01-05 | 沖電気工業株式会社 | 半導体熱処理装置 |
| JPS5944821A (ja) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | 半導体熱処理容器 |
| JPS61152226A (ja) * | 1984-12-26 | 1986-07-10 | 理研ビタミン株式会社 | 冷凍生地用品質改良剤 |
| JPS62123066A (ja) * | 1985-11-22 | 1987-06-04 | 東芝セラミツクス株式会社 | 熱処理用部材 |
| JPH0311623A (ja) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | 半導体熱処理用炉芯管 |
| JPH0311622A (ja) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | 排気キャップ |
| JP2764436B2 (ja) * | 1989-06-29 | 1998-06-11 | 東芝セラミックス株式会社 | 縦型拡散炉 |
| JPH03241735A (ja) * | 1990-02-20 | 1991-10-28 | Toshiba Ceramics Co Ltd | 半導体拡散炉用炉芯管 |
| JP2010232637A (ja) * | 2009-03-04 | 2010-10-14 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
-
1979
- 1979-09-26 JP JP12369279A patent/JPS5648130A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5648130A (en) | 1981-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3572247B2 (ja) | 半導体熱処理炉用ガス導入管 | |
| JP3106172B2 (ja) | 熱処理装置の封止構造 | |
| JPS6127896B2 (fr) | ||
| TWM590309U (zh) | 真空治具 | |
| JPS5923464B2 (ja) | 半導体熱処理装置 | |
| JP3503710B2 (ja) | 半導体ウエハの熱処理用搭載治具及び熱処理装置 | |
| JPS62262420A (ja) | 半導体加熱用耐熱管のシ−ル方法 | |
| JP4026751B2 (ja) | 半導体製造装置およびその製造方法 | |
| JP2003209064A (ja) | 半導体製造装置 | |
| JPH03241735A (ja) | 半導体拡散炉用炉芯管 | |
| JP2559627B2 (ja) | ウエーハ保持装置、該装置を用いたウエーハ搬出入方法、主として該搬出入方法に使用する縦形ウエーハボート | |
| JP3861350B2 (ja) | 低圧ｃｖｄ装置 | |
| JPH0220828Y2 (fr) | ||
| KR20140088284A (ko) | 태양전지 웨이퍼용 도핑 프로세스튜브의 배기노즐 | |
| JP2602003B2 (ja) | シリコン結晶体の接合方法 | |
| JPH04104494A (ja) | セラミックスヒータおよびその製造方法 | |
| JPS6344731A (ja) | 半導体装置の製造方法 | |
| JPH0249421A (ja) | 拡散炉用炉心管の構造 | |
| JP2698537B2 (ja) | 加熱装置 | |
| JPS6053036A (ja) | 半導体素子の製造方法 | |
| JP3602410B2 (ja) | 成膜装置 | |
| KR200148775Y1 (ko) | 반도체 제조장비의 반응로 | |
| JPH04280419A (ja) | 熱処理装置 | |
| JPH05152229A (ja) | 熱処理炉 | |
| JPS61171965A (ja) | 封止部材およびその冷却方法 |