JPS5648130A - Structure of furnace core tube for semiconductor diffusion - Google Patents
Structure of furnace core tube for semiconductor diffusionInfo
- Publication number
- JPS5648130A JPS5648130A JP12369279A JP12369279A JPS5648130A JP S5648130 A JPS5648130 A JP S5648130A JP 12369279 A JP12369279 A JP 12369279A JP 12369279 A JP12369279 A JP 12369279A JP S5648130 A JPS5648130 A JP S5648130A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- section
- furnace core
- core tube
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
Abstract
PURPOSE:To prevent gas leakage by providing cooling fins at a branch tube section at a gas induction side such as SiC or the like wherein a temperature at a junction section with a quartz glass tube is decreased to avoid thermal expansion. CONSTITUTION:Many fins 3 are provided at the end section 2 of the gas tube entrance side of a furnace core tube 1 made of SiC and a flange 4 is formed at an outside end. The furnace core tube 1 is connected to a junction tube 6 made of quartz glass through an Si rubber packing 5 to fix with a clasp 7. In this composition, thermal expansion at a junction section will be avoided and gas leakage will also be prevented by a complete seal. Furthermore, easy operation is attained because of the possibility of shortening the end section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12369279A JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12369279A JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5648130A true JPS5648130A (en) | 1981-05-01 |
JPS6127896B2 JPS6127896B2 (en) | 1986-06-27 |
Family
ID=14866955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12369279A Granted JPS5648130A (en) | 1979-09-26 | 1979-09-26 | Structure of furnace core tube for semiconductor diffusion |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5648130A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58418U (en) * | 1981-06-24 | 1983-01-05 | 沖電気工業株式会社 | Semiconductor heat treatment equipment |
JPS5944821A (en) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | Thermal treatment vessel for semiconductor |
JPS61152226A (en) * | 1984-12-26 | 1986-07-10 | 理研ビタミン株式会社 | Quality modifier for frozen dough |
JPS62123066A (en) * | 1985-11-22 | 1987-06-04 | 東芝セラミツクス株式会社 | Member for thermal process |
JPH0311623A (en) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | Furnace tube for heat treatment of semiconductor |
JPH0311622A (en) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | Exhaust cap |
JPH0332020A (en) * | 1989-06-29 | 1991-02-12 | Toshiba Ceramics Co Ltd | Vertical diffusing furnace |
JPH03241735A (en) * | 1990-02-20 | 1991-10-28 | Toshiba Ceramics Co Ltd | Furnace tube for semiconductor diffusion furnace |
CN101826450A (en) * | 2009-03-04 | 2010-09-08 | 株式会社日立国际电气 | The manufacture method of lining processor and semiconductor device |
-
1979
- 1979-09-26 JP JP12369279A patent/JPS5648130A/en active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58418U (en) * | 1981-06-24 | 1983-01-05 | 沖電気工業株式会社 | Semiconductor heat treatment equipment |
JPS5944821A (en) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | Thermal treatment vessel for semiconductor |
JPS61152226A (en) * | 1984-12-26 | 1986-07-10 | 理研ビタミン株式会社 | Quality modifier for frozen dough |
JPH0356698B2 (en) * | 1984-12-26 | 1991-08-29 | ||
JPS62123066A (en) * | 1985-11-22 | 1987-06-04 | 東芝セラミツクス株式会社 | Member for thermal process |
JPH0572351B2 (en) * | 1985-11-22 | 1993-10-12 | Toshiba Ceramics Co | |
JPH0311623A (en) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | Furnace tube for heat treatment of semiconductor |
JPH0311622A (en) * | 1989-06-09 | 1991-01-18 | Toshiba Ceramics Co Ltd | Exhaust cap |
JPH0332020A (en) * | 1989-06-29 | 1991-02-12 | Toshiba Ceramics Co Ltd | Vertical diffusing furnace |
JPH03241735A (en) * | 1990-02-20 | 1991-10-28 | Toshiba Ceramics Co Ltd | Furnace tube for semiconductor diffusion furnace |
CN101826450A (en) * | 2009-03-04 | 2010-09-08 | 株式会社日立国际电气 | The manufacture method of lining processor and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6127896B2 (en) | 1986-06-27 |
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