JPS61278179A - 超電導回路形成用エッチング方法 - Google Patents
超電導回路形成用エッチング方法Info
- Publication number
- JPS61278179A JPS61278179A JP60120129A JP12012985A JPS61278179A JP S61278179 A JPS61278179 A JP S61278179A JP 60120129 A JP60120129 A JP 60120129A JP 12012985 A JP12012985 A JP 12012985A JP S61278179 A JPS61278179 A JP S61278179A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- mgo
- magnesium oxide
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60120129A JPS61278179A (ja) | 1985-06-03 | 1985-06-03 | 超電導回路形成用エッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60120129A JPS61278179A (ja) | 1985-06-03 | 1985-06-03 | 超電導回路形成用エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61278179A true JPS61278179A (ja) | 1986-12-09 |
| JPH0374515B2 JPH0374515B2 (enExample) | 1991-11-27 |
Family
ID=14778687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60120129A Granted JPS61278179A (ja) | 1985-06-03 | 1985-06-03 | 超電導回路形成用エッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61278179A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01168080A (ja) * | 1987-12-24 | 1989-07-03 | Agency Of Ind Science & Technol | ジョセフソン接合素子の作製方法 |
| EP0493963A1 (en) * | 1990-12-28 | 1992-07-08 | Fujitsu Limited | Patterned mask having a transparent etching stopper layer |
| US5380608A (en) * | 1991-11-12 | 1995-01-10 | Dai Nippon Printing Co., Ltd. | Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5978586A (ja) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | Nbのパタ−ン形成法 |
-
1985
- 1985-06-03 JP JP60120129A patent/JPS61278179A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5978586A (ja) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | Nbのパタ−ン形成法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01168080A (ja) * | 1987-12-24 | 1989-07-03 | Agency Of Ind Science & Technol | ジョセフソン接合素子の作製方法 |
| EP0493963A1 (en) * | 1990-12-28 | 1992-07-08 | Fujitsu Limited | Patterned mask having a transparent etching stopper layer |
| US5876877A (en) * | 1990-12-28 | 1999-03-02 | Fujitsu Limited | Patterned mask having a transparent etching stopper layer |
| US5380608A (en) * | 1991-11-12 | 1995-01-10 | Dai Nippon Printing Co., Ltd. | Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0374515B2 (enExample) | 1991-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10833243B1 (en) | System and method for providing multi-conductive layer metallic interconnects for superconducting integrated circuits | |
| EP3542404B1 (en) | Method of making a josephson junction based superconductor device | |
| EP3485522B1 (en) | Josephson junction superconductor device interconnect structure | |
| JPS63226981A (ja) | 超伝導集積回路装置およびその製造方法 | |
| US4176029A (en) | Subminiature bore and conductor formation | |
| JPH0374515B2 (enExample) | ||
| US4263603A (en) | Subminiature bore and conductor formation | |
| WO2024069696A1 (ja) | 量子デバイス、量子演算装置及び量子デバイスの製造方法 | |
| JPH04346277A (ja) | 層状超伝導体回路とその製造方法 | |
| JP2539584B2 (ja) | 超電導量子干渉素子 | |
| JP2899308B2 (ja) | 超電導素子の製造方法 | |
| JP2646440B2 (ja) | ジョセフソン接合素子の製造方法 | |
| JPS61144892A (ja) | シヨセフソン集積回路の製造方法 | |
| JPS62183576A (ja) | ジヨセフソン素子の製造方法 | |
| JPH01186657A (ja) | 半導体装置の製造方法 | |
| JPS6060787A (ja) | 超伝導回路装置における絶縁領域の形成方法 | |
| JPH10133235A (ja) | 配線基板及びその製造方法 | |
| JPH0634417B2 (ja) | ジヨセフソン接合素子の製造方法 | |
| JPS63224273A (ja) | ジヨセフソン接合素子とその作製方法 | |
| JPS6060786A (ja) | 超伝導回路装置の製造方法 | |
| JPS63289880A (ja) | ジョセフソン接合素子の製造方法 | |
| JPH0360184B2 (enExample) | ||
| JPH058596B2 (enExample) | ||
| JP2003218218A (ja) | 半導体キャパシタおよびその製造方法 | |
| JPH0374514B2 (enExample) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |