JPS6127680A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS6127680A
JPS6127680A JP14917984A JP14917984A JPS6127680A JP S6127680 A JPS6127680 A JP S6127680A JP 14917984 A JP14917984 A JP 14917984A JP 14917984 A JP14917984 A JP 14917984A JP S6127680 A JPS6127680 A JP S6127680A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon film
oxygen
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14917984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6311785B2 (enrdf_load_stackoverflow
Inventor
Yuichi Mikata
見方　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP14917984A priority Critical patent/JPS6127680A/ja
Publication of JPS6127680A publication Critical patent/JPS6127680A/ja
Publication of JPS6311785B2 publication Critical patent/JPS6311785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Non-Volatile Memory (AREA)
JP14917984A 1984-07-18 1984-07-18 半導体記憶装置の製造方法 Granted JPS6127680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14917984A JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14917984A JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6127680A true JPS6127680A (ja) 1986-02-07
JPS6311785B2 JPS6311785B2 (enrdf_load_stackoverflow) 1988-03-16

Family

ID=15469521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14917984A Granted JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6127680A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631076A (ja) * 1986-06-20 1988-01-06 Toshiba Corp 半導体メモリ装置の製造方法
JPH03205411A (ja) * 1989-05-30 1991-09-06 Asahi Chem Ind Co Ltd 熱可塑性共重合体の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591877A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591877A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631076A (ja) * 1986-06-20 1988-01-06 Toshiba Corp 半導体メモリ装置の製造方法
JPH03205411A (ja) * 1989-05-30 1991-09-06 Asahi Chem Ind Co Ltd 熱可塑性共重合体の製造方法

Also Published As

Publication number Publication date
JPS6311785B2 (enrdf_load_stackoverflow) 1988-03-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term