JPS6311785B2 - - Google Patents

Info

Publication number
JPS6311785B2
JPS6311785B2 JP59149179A JP14917984A JPS6311785B2 JP S6311785 B2 JPS6311785 B2 JP S6311785B2 JP 59149179 A JP59149179 A JP 59149179A JP 14917984 A JP14917984 A JP 14917984A JP S6311785 B2 JPS6311785 B2 JP S6311785B2
Authority
JP
Japan
Prior art keywords
silicon film
film
single crystal
crystal silicon
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59149179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127680A (ja
Inventor
Juichi Mikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14917984A priority Critical patent/JPS6127680A/ja
Publication of JPS6127680A publication Critical patent/JPS6127680A/ja
Publication of JPS6311785B2 publication Critical patent/JPS6311785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Non-Volatile Memory (AREA)
JP14917984A 1984-07-18 1984-07-18 半導体記憶装置の製造方法 Granted JPS6127680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14917984A JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14917984A JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6127680A JPS6127680A (ja) 1986-02-07
JPS6311785B2 true JPS6311785B2 (enrdf_load_stackoverflow) 1988-03-16

Family

ID=15469521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14917984A Granted JPS6127680A (ja) 1984-07-18 1984-07-18 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6127680A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644627B2 (ja) * 1986-06-20 1994-06-08 株式会社東芝 半導体メモリ装置の製造方法
JP2667550B2 (ja) * 1989-05-30 1997-10-27 旭化成工業株式会社 熱可塑性共重合体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591877A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6127680A (ja) 1986-02-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term