JPS61275186A - 単結晶引上装置 - Google Patents
単結晶引上装置Info
- Publication number
- JPS61275186A JPS61275186A JP11425085A JP11425085A JPS61275186A JP S61275186 A JPS61275186 A JP S61275186A JP 11425085 A JP11425085 A JP 11425085A JP 11425085 A JP11425085 A JP 11425085A JP S61275186 A JPS61275186 A JP S61275186A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- crucible
- lid
- crystal pulling
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 44
- 239000007788 liquid Substances 0.000 claims description 67
- 238000007789 sealing Methods 0.000 claims description 50
- 239000002994 raw material Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 238000004891 communication Methods 0.000 description 7
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11425085A JPS61275186A (ja) | 1985-05-29 | 1985-05-29 | 単結晶引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11425085A JPS61275186A (ja) | 1985-05-29 | 1985-05-29 | 単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61275186A true JPS61275186A (ja) | 1986-12-05 |
| JPH0572357B2 JPH0572357B2 (enrdf_load_stackoverflow) | 1993-10-12 |
Family
ID=14633060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11425085A Granted JPS61275186A (ja) | 1985-05-29 | 1985-05-29 | 単結晶引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61275186A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009202149A (ja) * | 2008-02-27 | 2009-09-10 | Green Energy Technology Inc | 緊急用圧力解放装置を備えた結晶成長炉システム |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036397A (ja) * | 1983-08-06 | 1985-02-25 | Sumitomo Electric Ind Ltd | 化合物単結晶育成装置 |
| JPS6077196A (ja) * | 1983-10-03 | 1985-05-01 | Sumitomo Electric Ind Ltd | 単結晶の引上方法 |
-
1985
- 1985-05-29 JP JP11425085A patent/JPS61275186A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036397A (ja) * | 1983-08-06 | 1985-02-25 | Sumitomo Electric Ind Ltd | 化合物単結晶育成装置 |
| JPS6077196A (ja) * | 1983-10-03 | 1985-05-01 | Sumitomo Electric Ind Ltd | 単結晶の引上方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009202149A (ja) * | 2008-02-27 | 2009-09-10 | Green Energy Technology Inc | 緊急用圧力解放装置を備えた結晶成長炉システム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572357B2 (enrdf_load_stackoverflow) | 1993-10-12 |
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